Study of internal versus external gettering of iron during slow cooling processes for silicon solar cell fabrication

Hofstetter, Jasmin and Lelievre, Jean Francoise and Cañizo Nadal, Carlos del and Luque López, Antonio (2010). Study of internal versus external gettering of iron during slow cooling processes for silicon solar cell fabrication. "Solid State Phenomena", v. 156-15 ; pp. 387-393. ISSN 1012-0394. https://doi.org/10.4028/www.scientific.net/SSP.156-158.387.

Description

Title: Study of internal versus external gettering of iron during slow cooling processes for silicon solar cell fabrication
Author/s:
  • Hofstetter, Jasmin
  • Lelievre, Jean Francoise
  • Cañizo Nadal, Carlos del
  • Luque López, Antonio
Item Type: Article
Título de Revista/Publicación: Solid State Phenomena
Date: 2010
ISSN: 1012-0394
Volume: 156-15
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The e�ect of slow cooling after di�erent high temperature treatments on the in- terstitial iron concentration and on the electron lifetime of p-type mc-Si wafers has been in- vestigated. The respective impacts of internal relaxation gettering and external segregation gettering of metal impurities during an extended phosphorous di�usion gettering are studied. It is shown that the enhanced reduction of interstitial Fe during extended P-gettering is due to an enhanced segregation gettering while faster impurities like Cu and Ni are possibly reduced due to an internal gettering e�ect.

More information

Item ID: 8422
DC Identifier: http://oa.upm.es/8422/
OAI Identifier: oai:oa.upm.es:8422
DOI: 10.4028/www.scientific.net/SSP.156-158.387
Official URL: http://www.scientific.net/SSP.156-158.387
Deposited by: Memoria Investigacion
Deposited on: 24 Aug 2011 08:53
Last Modified: 20 Apr 2016 17:13
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