Intermediate band position modulated by Zn addition in Ti doped CuGaS2

Seminóvski Pérez, Yohanna and Palacios Clemente, Pablo and Wahnón Benarroch, Perla (2011). Intermediate band position modulated by Zn addition in Ti doped CuGaS2. "Thin Solid Films", v. 519 (n. 21); pp. 7517-7521. ISSN 0040-6090. https://doi.org/10.10167j.tsf.2010.12.136.

Description

Title: Intermediate band position modulated by Zn addition in Ti doped CuGaS2
Author/s:
  • Seminóvski Pérez, Yohanna
  • Palacios Clemente, Pablo
  • Wahnón Benarroch, Perla
Item Type: Article
Título de Revista/Publicación: Thin Solid Films
Date: August 2011
ISSN: 0040-6090
Volume: 519
Subjects:
Freetext Keywords: Chalcopyrite; Intermediate band materials; Electronic structure
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnologías Especiales Aplicadas a la Aeronáutica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Many works have been done recently with the aim of obtaining intermediate band semiconductors, due to the significant importance of improving solar cell efficiency. Intermediate band materials based on CuGaS2 chalcopyrite semiconductor are one of the proposed materials and specifically Ti doped CuGaS2 is a promising structure to form the intermediate band. Here we present an ab-initio study using the density functional theory in this type of intermediate band chalcogens. Several concentrations of Ti and Zn substituting Ga atoms have been studied and their electronic densities of states were obtained. Results demonstrate a chalcopyrite semiconductor band-gap shortening and intermediate band position modulation inside this band-gap by Zn addition.

More information

Item ID: 8428
DC Identifier: http://oa.upm.es/8428/
OAI Identifier: oai:oa.upm.es:8428
DOI: 10.10167j.tsf.2010.12.136
Official URL: http://www.sciencedirect.com/science/journal/00406090
Deposited by: Memoria Investigacion
Deposited on: 23 Aug 2011 11:54
Last Modified: 20 Apr 2016 17:13
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