Lateral absorption measurements of InAs/GaAs quantum dots stacks: Potential as intermediate band material for high efficiency solar cells

Cánovas Díaz, Enrique; Martí Vega, Antonio; Luque López, Antonio; Farmer, C.D.; Stanley, Colin; Sanchez, A.M.; Ben, T. y Molina Rubio, Sergio Ignacio (2010). Lateral absorption measurements of InAs/GaAs quantum dots stacks: Potential as intermediate band material for high efficiency solar cells. En: "The E-MRS 2009 Spring Meeting, Symposium B", 08/06/2009 - 12/06/2009, Strasbourg, Francia.

Descripción

Título: Lateral absorption measurements of InAs/GaAs quantum dots stacks: Potential as intermediate band material for high efficiency solar cells
Autor/es:
  • Cánovas Díaz, Enrique
  • Martí Vega, Antonio
  • Luque López, Antonio
  • Farmer, C.D.
  • Stanley, Colin
  • Sanchez, A.M.
  • Ben, T.
  • Molina Rubio, Sergio Ignacio
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: The E-MRS 2009 Spring Meeting, Symposium B
Fechas del Evento: 08/06/2009 - 12/06/2009
Lugar del Evento: Strasbourg, Francia
Título del Libro: Energy Procedia - Proceedings of Inorganic and Nanostructured Photovoltaics (E-MRS 2009 Symposium B)
Fecha: Enero 2010
Volumen: 2
Materias:
Palabras Clave Informales: Intermediate band; Quantum dots; Absorption; Characterization; Intermediate band solar cell
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Prototypes based on InAs/GaAs QDs have been manufactured in order to realize the theoretically predicted high efficiency intermediate band solar cells (IBSCs). Unfortunately, until now, these prototypes have not yet demonstrated the expected increase in efficiency when compared with reference samples without IB material. One of the main arguments explaining this performance is the weak photon absorption in the QD-IB material, arising from a low density of QDs. In this work, we have analyzed the absorption coefficient of the IB material by developing a sample in an optical wave-guided configuration. This configuration allows us to illuminate the QDs laterally, increasing the path length for photon absorption. Using a multi-section metal contact device design, we were able to measure an absorption coefficient of ∼100 cm−1 around the band edge (∼1 eV ) defined by the transition in InAs/GaAs QD-IB materials. This figure, and its influence on the IBSC concept, is analyzed for this system.

Más información

ID de Registro: 8718
Identificador DC: http://oa.upm.es/8718/
Identificador OAI: oai:oa.upm.es:8718
URL Oficial: http://www.sciencedirect.com/science/article/pii/S187661021000007X
Depositado por: Memoria Investigacion
Depositado el: 05 Oct 2011 10:36
Ultima Modificación: 20 Abr 2016 17:24
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