Lateral absorption measurements of InAs/GaAs quantum dots stacks: Potential as intermediate band material for high efficiency solar cells

Cánovas Díaz, Enrique and Martí Vega, Antonio and Luque López, Antonio and Farmer, C.D. and Stanley, Colin and Sanchez, A.M. and Ben, T. and Molina Rubio, Sergio Ignacio (2010). Lateral absorption measurements of InAs/GaAs quantum dots stacks: Potential as intermediate band material for high efficiency solar cells. In: "The E-MRS 2009 Spring Meeting, Symposium B", 08/06/2009 - 12/06/2009, Strasbourg, Francia.

Description

Title: Lateral absorption measurements of InAs/GaAs quantum dots stacks: Potential as intermediate band material for high efficiency solar cells
Author/s:
  • Cánovas Díaz, Enrique
  • Martí Vega, Antonio
  • Luque López, Antonio
  • Farmer, C.D.
  • Stanley, Colin
  • Sanchez, A.M.
  • Ben, T.
  • Molina Rubio, Sergio Ignacio
Item Type: Presentation at Congress or Conference (Article)
Event Title: The E-MRS 2009 Spring Meeting, Symposium B
Event Dates: 08/06/2009 - 12/06/2009
Event Location: Strasbourg, Francia
Title of Book: Energy Procedia - Proceedings of Inorganic and Nanostructured Photovoltaics (E-MRS 2009 Symposium B)
Date: January 2010
Volume: 2
Subjects:
Freetext Keywords: Intermediate band; Quantum dots; Absorption; Characterization; Intermediate band solar cell
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Prototypes based on InAs/GaAs QDs have been manufactured in order to realize the theoretically predicted high efficiency intermediate band solar cells (IBSCs). Unfortunately, until now, these prototypes have not yet demonstrated the expected increase in efficiency when compared with reference samples without IB material. One of the main arguments explaining this performance is the weak photon absorption in the QD-IB material, arising from a low density of QDs. In this work, we have analyzed the absorption coefficient of the IB material by developing a sample in an optical wave-guided configuration. This configuration allows us to illuminate the QDs laterally, increasing the path length for photon absorption. Using a multi-section metal contact device design, we were able to measure an absorption coefficient of ∼100 cm−1 around the band edge (∼1 eV ) defined by the transition in InAs/GaAs QD-IB materials. This figure, and its influence on the IBSC concept, is analyzed for this system.

More information

Item ID: 8718
DC Identifier: http://oa.upm.es/8718/
OAI Identifier: oai:oa.upm.es:8718
Official URL: http://www.sciencedirect.com/science/article/pii/S187661021000007X
Deposited by: Memoria Investigacion
Deposited on: 05 Oct 2011 10:36
Last Modified: 20 Apr 2016 17:24
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