Embedment of metal nanoparticles in GaAs and Si for plasmonic absorption enhancement in intermediate band solar cells

Moura Dias Mendes, Manuel Joao de; Hernández Martín, Estela; Tobías Galicia, Ignacio; Martí Vega, Antonio y Luque López, Antonio (2010). Embedment of metal nanoparticles in GaAs and Si for plasmonic absorption enhancement in intermediate band solar cells. En: "25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion", 06/09/2010 - 10/09/2010, Valencia, España.

Descripción

Título: Embedment of metal nanoparticles in GaAs and Si for plasmonic absorption enhancement in intermediate band solar cells
Autor/es:
  • Moura Dias Mendes, Manuel Joao de
  • Hernández Martín, Estela
  • Tobías Galicia, Ignacio
  • Martí Vega, Antonio
  • Luque López, Antonio
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion
Fechas del Evento: 06/09/2010 - 10/09/2010
Lugar del Evento: Valencia, España
Título del Libro: Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion
Fecha: 2010
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The high near-field enhancement occurring in the vicinity of metallic nanoparticles (MNPs) sustaining surface plasmons can only be fully exploited in photovoltaic devices if the MNPs are placed inside their semiconducting material, in the photoactive region. In this work an experimental procedure is studied to embed MNPs in gallium arsenide (GaAs) and silicon (Si), which can be applied to other semiconductor host materials. The approach consists in spin-coating colloidal MNPs dispersed in solution onto the substrate surface. Then a capping layer of the same material as the substrate is deposited on top to embed the MNPs in the semiconductor. The extinction spectra of silver (Ag) and gold (Au) MNPs embedded in GaAs and Si is modeled with Mie theory for comparison with optical measurements. This contribution constitutes the initial step towards the realization of quantum-dot intermediate band solar cells (QD-IBSC) with MNP

Más información

ID de Registro: 8899
Identificador DC: http://oa.upm.es/8899/
Identificador OAI: oai:oa.upm.es:8899
Depositado por: Memoria Investigacion
Depositado el: 07 Oct 2011 08:40
Ultima Modificación: 20 Abr 2016 17:32
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