Moura Dias Mendes, Manuel Joao de and Hernández Martín, Estela and Tobías Galicia, Ignacio and Martí Vega, Antonio and Luque López, Antonio (2010) Embedment of metal nanoparticles in GaAs and Si for plasmonic absorption enhancement in intermediate band solar cells. In: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 06/09/2010 - 10/09/2010, Valencia, España.
Ver estadisticas de descargas para este eprint (solo desde ordenadores de la UPM)
| Item Type: | Presentation at Congress or Day (Article) | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Authors/Creators: |
| ||||||||||||
| Title: | Embedment of metal nanoparticles in GaAs and Si for plasmonic absorption enhancement in intermediate band solar cells | ||||||||||||
| Event Title: | 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion | ||||||||||||
| Event Dates: | 06/09/2010 - 10/09/2010 | ||||||||||||
| Event Location: | Valencia, España | ||||||||||||
| Title of Book: | Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion | ||||||||||||
| Publisher: | WIP-Renewable Energies | ||||||||||||
| Date: | 2010 | ||||||||||||
| Department: | Physical Electronics | ||||||||||||
| Faculty: | E.T.S.I. Telecommunication (UPM) | ||||||||||||
| Creative Commons licenses: | Recognition - No derivative works - No commercial | ||||||||||||
| Item ID: | 8899 | ||||||||||||
| Subjects: | Renewable Energy Physics |
Texto completo disponible como:
![[img]](/style/images/fileicons/pdf.png)
| PDF 307Kb - Idioma: English |
Abstract
The high near-field enhancement occurring in the vicinity of metallic nanoparticles (MNPs) sustaining surface plasmons can only be fully exploited in photovoltaic devices if the MNPs are placed inside their semiconducting material, in the photoactive region. In this work an experimental procedure is studied to embed MNPs in gallium arsenide (GaAs) and silicon (Si), which can be applied to other semiconductor host materials. The approach consists in spin-coating colloidal MNPs dispersed in solution onto the substrate surface. Then a capping layer of the same material as the substrate is deposited on top to embed the MNPs in the semiconductor. The extinction spectra of silver (Ag) and gold (Au) MNPs embedded in GaAs and Si is modeled with Mie theory for comparison with optical measurements. This contribution constitutes the initial step towards the realization of quantum-dot intermediate band solar cells (QD-IBSC) with MNP
| Item Type: | Presentation at Congress or Day (Article) |
|---|---|
| Subjects: | Renewable Energy Physics |
| Código ID: | 8899 |
| Depositado Por: | Memoria Investigacion |
| Depositado el: | 07 Oct 2011 10:40 |
| Last Modified: | 07 Oct 2011 10:40 |
Sólo para Personal del Archivo: editar este registro
