Embedment of metal nanoparticles in GaAs and Si for plasmonic absorption enhancement in intermediate band solar cells

Moura Dias Mendes, Manuel Joao de and Hernández Martín, Estela and Tobías Galicia, Ignacio and Martí Vega, Antonio and Luque López, Antonio (2010). Embedment of metal nanoparticles in GaAs and Si for plasmonic absorption enhancement in intermediate band solar cells. In: "25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion", 06/09/2010 - 10/09/2010, Valencia, España.

Description

Title: Embedment of metal nanoparticles in GaAs and Si for plasmonic absorption enhancement in intermediate band solar cells
Author/s:
  • Moura Dias Mendes, Manuel Joao de
  • Hernández Martín, Estela
  • Tobías Galicia, Ignacio
  • Martí Vega, Antonio
  • Luque López, Antonio
Item Type: Presentation at Congress or Conference (Article)
Event Title: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion
Event Dates: 06/09/2010 - 10/09/2010
Event Location: Valencia, España
Title of Book: Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion
Date: 2010
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The high near-field enhancement occurring in the vicinity of metallic nanoparticles (MNPs) sustaining surface plasmons can only be fully exploited in photovoltaic devices if the MNPs are placed inside their semiconducting material, in the photoactive region. In this work an experimental procedure is studied to embed MNPs in gallium arsenide (GaAs) and silicon (Si), which can be applied to other semiconductor host materials. The approach consists in spin-coating colloidal MNPs dispersed in solution onto the substrate surface. Then a capping layer of the same material as the substrate is deposited on top to embed the MNPs in the semiconductor. The extinction spectra of silver (Ag) and gold (Au) MNPs embedded in GaAs and Si is modeled with Mie theory for comparison with optical measurements. This contribution constitutes the initial step towards the realization of quantum-dot intermediate band solar cells (QD-IBSC) with MNP

More information

Item ID: 8899
DC Identifier: http://oa.upm.es/8899/
OAI Identifier: oai:oa.upm.es:8899
Deposited by: Memoria Investigacion
Deposited on: 07 Oct 2011 08:40
Last Modified: 20 Apr 2016 17:32
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