First principles calculations of complex intermediate band materials for photovoltaic devices

Wahnón Benarroch, Perla and Aguilera Bonet, Irene and Palacios Clemente, Pablo and Sánchez Noriega, Kefrén (2010). First principles calculations of complex intermediate band materials for photovoltaic devices. In: "Materials Research Society Symposium 2010", 30/11/2010 - 04/12/2010, Boston, EEUU. pp. 1-6.

Description

Title: First principles calculations of complex intermediate band materials for photovoltaic devices
Author/s:
  • Wahnón Benarroch, Perla
  • Aguilera Bonet, Irene
  • Palacios Clemente, Pablo
  • Sánchez Noriega, Kefrén
Item Type: Presentation at Congress or Conference (Article)
Event Title: Materials Research Society Symposium 2010
Event Dates: 30/11/2010 - 04/12/2010
Event Location: Boston, EEUU
Title of Book: Materials Research Society Symposium Proceedings
Date: 2010
Volume: 1211
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnologías Especiales Aplicadas a la Aeronáutica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

An ab initio study of several compounds candidates to behave as intermediate band materials is presented. The use of these materials as the active element in solar cells is a promising way to enhance the photovoltaic efficiency. Indeed from this point of view, most interesting compounds are those whose host semiconductor presents a band1gap close to the optimum value of 2 eV. Chalcogenide compounds substituted by light transition metals are solid candidates to this end. While they are being further characterized and experimentally synthesized, another approach is being examined. It consists of using Si as host semiconductor. Ti implantation at concentrations several orders of magnitude above equilibrium solubility has shown a probable intermediate band material behavior, the origin of the intermediate band being related to levels of interstitial Ti. Optoelectronic characterization of this material is completed. A novel possibility consists of combining chalcogen S implantation with boron. In this case preliminary results of electronic structure are shown.

More information

Item ID: 8927
DC Identifier: http://oa.upm.es/8927/
OAI Identifier: oai:oa.upm.es:8927
Deposited by: Memoria Investigacion
Deposited on: 07 Oct 2011 08:17
Last Modified: 20 Apr 2016 17:33
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