First principles calculations of complex intermediate band materials for photovoltaic devices

Wahnón Benarroch, Perla; Aguilera Bonet, Irene; Palacios Clemente, Pablo y Sánchez Noriega, Kefrén (2010). First principles calculations of complex intermediate band materials for photovoltaic devices. En: "Materials Research Society Symposium 2010", 30/11/2010 - 04/12/2010, Boston, EEUU. pp. 1-6.

Descripción

Título: First principles calculations of complex intermediate band materials for photovoltaic devices
Autor/es:
  • Wahnón Benarroch, Perla
  • Aguilera Bonet, Irene
  • Palacios Clemente, Pablo
  • Sánchez Noriega, Kefrén
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: Materials Research Society Symposium 2010
Fechas del Evento: 30/11/2010 - 04/12/2010
Lugar del Evento: Boston, EEUU
Título del Libro: Materials Research Society Symposium Proceedings
Fecha: 2010
Volumen: 1211
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Tecnologías Especiales Aplicadas a la Aeronáutica [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

An ab initio study of several compounds candidates to behave as intermediate band materials is presented. The use of these materials as the active element in solar cells is a promising way to enhance the photovoltaic efficiency. Indeed from this point of view, most interesting compounds are those whose host semiconductor presents a band1gap close to the optimum value of 2 eV. Chalcogenide compounds substituted by light transition metals are solid candidates to this end. While they are being further characterized and experimentally synthesized, another approach is being examined. It consists of using Si as host semiconductor. Ti implantation at concentrations several orders of magnitude above equilibrium solubility has shown a probable intermediate band material behavior, the origin of the intermediate band being related to levels of interstitial Ti. Optoelectronic characterization of this material is completed. A novel possibility consists of combining chalcogen S implantation with boron. In this case preliminary results of electronic structure are shown.

Más información

ID de Registro: 8927
Identificador DC: http://oa.upm.es/8927/
Identificador OAI: oai:oa.upm.es:8927
Depositado por: Memoria Investigacion
Depositado el: 07 Oct 2011 08:17
Ultima Modificación: 20 Abr 2016 17:33
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