New materials for intermediate band photovoltaic cells. A theoretical and experimental approach

Wahnón Benarroch, Perla and Palacios Clemente, Pablo and Aguilera Bonet, Irene and Seminóvski Pérez, Yohanna and Conesa, Jose Carlos and Lucena, Raquel (2010). New materials for intermediate band photovoltaic cells. A theoretical and experimental approach. In: "25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion", 06/09/2010 - 10/09/2010, Valencia, España.

Description

Title: New materials for intermediate band photovoltaic cells. A theoretical and experimental approach
Author/s:
  • Wahnón Benarroch, Perla
  • Palacios Clemente, Pablo
  • Aguilera Bonet, Irene
  • Seminóvski Pérez, Yohanna
  • Conesa, Jose Carlos
  • Lucena, Raquel
Item Type: Presentation at Congress or Conference (Article)
Event Title: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion
Event Dates: 06/09/2010 - 10/09/2010
Event Location: Valencia, España
Title of Book: Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion
Date: 2010
Subjects:
Freetext Keywords: intermediate band, quantum modelling, high efficiency, tin sulphide, silicon clathrate, transition element, thin film
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnologías Especiales Aplicadas a la Aeronáutica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Density functional theory calculations of certain transition-metal doped semiconductors show a partially occupied relatively narrow band located between valence band and conduction band. These novel systems, containing the metallic band, are called intermediate-band materials. They have enhanced optoelectronic properties which allow an increase in solar energy conversion efficiency of conventional solar cells. We previously proposed III-V, chalcopyrite and sulfide derived compounds showing desirable characteristics to produce the intermediate band of interest inside the band-gap. In order to obtain further intermediate-band material proposals, this work focuses on studing other compounds constituted mainly by tetravalent elements. The first proposal is vanadium substituting Sn atoms in SnS2 , the second one is composed by type II silicon clathrate with two possibilities: vanadium substituting Si and Ag occluded in the intra-crystalline cavities. UV-Vis-NIR spectra of some of these systems experimentally synthesized show an agreement with previous theoretical predictions

More information

Item ID: 8929
DC Identifier: http://oa.upm.es/8929/
OAI Identifier: oai:oa.upm.es:8929
Official URL: http://www.photovoltaic-conference.com/
Deposited by: Memoria Investigacion
Deposited on: 07 Oct 2011 08:02
Last Modified: 20 Apr 2016 17:33
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