New materials for intermediate band photovoltaic cells. A theoretical and experimental approach

Wahnón Benarroch, Perla; Palacios Clemente, Pablo; Aguilera Bonet, Irene; Seminóvski Pérez, Yohanna; Conesa, Jose Carlos y Lucena, Raquel (2010). New materials for intermediate band photovoltaic cells. A theoretical and experimental approach. En: "25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion", 06/09/2010 - 10/09/2010, Valencia, España.

Descripción

Título: New materials for intermediate band photovoltaic cells. A theoretical and experimental approach
Autor/es:
  • Wahnón Benarroch, Perla
  • Palacios Clemente, Pablo
  • Aguilera Bonet, Irene
  • Seminóvski Pérez, Yohanna
  • Conesa, Jose Carlos
  • Lucena, Raquel
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion
Fechas del Evento: 06/09/2010 - 10/09/2010
Lugar del Evento: Valencia, España
Título del Libro: Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion
Fecha: 2010
Materias:
Palabras Clave Informales: intermediate band, quantum modelling, high efficiency, tin sulphide, silicon clathrate, transition element, thin film
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Tecnologías Especiales Aplicadas a la Aeronáutica [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Density functional theory calculations of certain transition-metal doped semiconductors show a partially occupied relatively narrow band located between valence band and conduction band. These novel systems, containing the metallic band, are called intermediate-band materials. They have enhanced optoelectronic properties which allow an increase in solar energy conversion efficiency of conventional solar cells. We previously proposed III-V, chalcopyrite and sulfide derived compounds showing desirable characteristics to produce the intermediate band of interest inside the band-gap. In order to obtain further intermediate-band material proposals, this work focuses on studing other compounds constituted mainly by tetravalent elements. The first proposal is vanadium substituting Sn atoms in SnS2 , the second one is composed by type II silicon clathrate with two possibilities: vanadium substituting Si and Ag occluded in the intra-crystalline cavities. UV-Vis-NIR spectra of some of these systems experimentally synthesized show an agreement with previous theoretical predictions

Más información

ID de Registro: 8929
Identificador DC: http://oa.upm.es/8929/
Identificador OAI: oai:oa.upm.es:8929
URL Oficial: http://www.photovoltaic-conference.com/
Depositado por: Memoria Investigacion
Depositado el: 07 Oct 2011 08:02
Ultima Modificación: 20 Abr 2016 17:33
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