Strain balanced quantum posts for intermediate band solar cells

Alonso Alvarez, Diego and Alén Millán, Benito and Ripalda Cobián, Jose María and González Taboada, Alfonso and Llorens, J.M. and González Diez, M. Yolanda and González Soto, Luisa and Briones Fernández-Pola, Fernando and Antolín Fernández, Elisa and Ramiro Gonzalez, Iñigo and Martí Vega, Antonio and Luque López, Antonio and Roldan, M.A. and Hernandez-Saz, J. and Herrera, M. and Molina Rubio, Sergio Ignacio (2010). Strain balanced quantum posts for intermediate band solar cells. In: "35th IEEE Photovoltaic Specialists Conference", 20/06/2010 - 25/06/2010, Honolulu, Hawaii, EEUU. ISBN 978-1-4244-5890-5.

Description

Title: Strain balanced quantum posts for intermediate band solar cells
Author/s:
  • Alonso Alvarez, Diego
  • Alén Millán, Benito
  • Ripalda Cobián, Jose María
  • González Taboada, Alfonso
  • Llorens, J.M.
  • González Diez, M. Yolanda
  • González Soto, Luisa
  • Briones Fernández-Pola, Fernando
  • Antolín Fernández, Elisa
  • Ramiro Gonzalez, Iñigo
  • Martí Vega, Antonio
  • Luque López, Antonio
  • Roldan, M.A.
  • Hernandez-Saz, J.
  • Herrera, M.
  • Molina Rubio, Sergio Ignacio
Item Type: Presentation at Congress or Conference (Article)
Event Title: 35th IEEE Photovoltaic Specialists Conference
Event Dates: 20/06/2010 - 25/06/2010
Event Location: Honolulu, Hawaii, EEUU
Title of Book: Proceedings of 35th IEEE Photovoltaic Specialists Conference
Date: 2010
ISBN: 978-1-4244-5890-5
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In this work we present strain balanced InAs quantum post of exceptional length in the context of photovoltaics. We discuss the general properties of these nanostructures and their impact in the practical implementation of an intermediate band solar cell. We have studied the photocurrent generated by strain balanced quantum posts embedded in a GaAs single crystal, and compared our results with quantum dot based devices. The incorporation of phosphorous in the matrix to partially compensate the accumulated stress enables a significant increase of the quantum post maximum length. The relative importance of tunneling and thermal escape processes is found to depend strongly on the geometry of the nanostructures. tunneling and thermal escape processes is found to depend strongly on the geometry of the nanostructures.

More information

Item ID: 9287
DC Identifier: http://oa.upm.es/9287/
OAI Identifier: oai:oa.upm.es:9287
Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5614557&tag=1
Deposited by: Memoria Investigacion
Deposited on: 28 Oct 2011 08:26
Last Modified: 20 Apr 2016 17:46
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