Export: High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

Gacevic, Zarko and Fernández-Garrido, Sergio and Rebled, J.M. and Estradé, S. and Peiró, F. and Calleja Pardo, Enrique (2011). High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy. "Applied Physics Letters", v. 99 (n. 3); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.3614434.

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