Export: Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs

Ulloa Herrero, José María and Moral, M. del and Montes, M. and Bozkurt, M. and Koenraad, P.M. and Fernández González, Alvaro de Guzmán and Hierro Cano, Adrián (2011). Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs. In: "SPIE Photonics West 2011", 25/01/2011 - 27/01/2011, San Francisco, CA, EEUU. pp..

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