Export: Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

Fernández-Garrido, Sergio and Redondo-Cubero, Andrés and Gago, R. and Bertram, F. and Christen, J. and Luna García de la Infanta, Esperanza and Trampert, Achim and Pereiro Viterbo, Juan and Muñoz Merino, Elias and Calleja Pardo, Enrique (2008). Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy. "Journal of Applied Physics", v. 104 (n. 8); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.2999564.

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