Export: Using pMOS Pass-Gates to Boost SRAM Performance by Exploiting Strain Effects in Sub-20-nm FinFET Technologies

Royer del Barrio, Pablo and López Vallejo, Marisa (2014). Using pMOS Pass-Gates to Boost SRAM Performance by Exploiting Strain Effects in Sub-20-nm FinFET Technologies. "IEEE Transactions on Nanotechnology", v. 13 (n. 6); pp. 1226-1233. ISSN 1536-125X. https://doi.org/10.1109/TNANO.2014.2354073.

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