Export: Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate
Kong, Xiang and Albert, Steven and Bengoechea Encabo, Ana and Sánchez García, Miguel Angel and Calleja Pardo, Enrique and Calle Gómez, Fernando and Trampert, Achim (2015). Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate. "Physica Status Solidi A-Applications and materials science", v. 212 (n. 4); pp. 736-739. ISSN 1862-6300. https://doi.org/10.1002/pssa.201400198.
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