Exportar: Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate
Kong, Xiang; Albert, Steven; Bengoechea Encabo, Ana; Sánchez García, Miguel Angel; Calleja Pardo, Enrique; Calle Gómez, Fernando y Trampert, Achim (2015). Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate. "Physica Status Solidi A-Applications and materials science", v. 212 (n. 4); pp. 736-739. ISSN 1862-6300. https://doi.org/10.1002/pssa.201400198.
Por favor, seleccione un formato de salida:
