TY - CONF ID - upm36757 UR - http://oa.upm.es/36757/ A1 - Araujo Gay, Daniel A1 - Villar Castro, María del Pilar A1 - Lloret, Fernando A1 - Rodríguez Madrid, Juan Gabriel A1 - Fuentes Iriarte, Gonzalo A1 - Williams, Oliver A. A1 - Calle Gómez, Fernando Y1 - 2014/// N2 - Piezoelectric AlN layer grain orientation, grown by room temperature reactive sputtering, is analyzed by transmission electron microscopy (TEM).Two types of samples are studied: (i) AlN grown on well-polished NCD (nano-crystalline diamond) diamond, (ii) AlN grown on an up-side down NCD layer previously grown on a Si substrate, i.e. diamond surface as smooth as that of Si substrates. The second set of sample show a faster lignment of their AlN grain caxis attributed to it smoother diamond free surface. No grain orientation relationship between diamond substrate grain and the AlN ones is evidenced, which seems to indicate the preponderance role of the surface substrate state. TI - TEM study of the AlN grain orientation grown on NCD diamond substrate SP - 1 M2 - Delphi, Greece AV - public EP - 2 T2 - 12th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2014) ER -