@article{upm48240,
          volume = {19},
          number = {15},
           month = {June},
          author = {Catalina Coll and Enrique Barrig{\'o}n Monta{\~n}{\'e}s and L. L{\'o}pez-Conesa and J. Rebled and Laura Barrutia Poncela and Ignacio Rey-Stolle Prado and S. Estrad{\'e} and Carlos Algora del Valle and F. Peir{\'o}},
            note = {Semiconductores III-V},
           title = {The effect of Sb-surfactant on GaInP CuPtB type ordering: Assessment through dark field TEM and aberration corrected HAADF imaging},
       publisher = {Royal Society of Chemistry},
            year = {2017},
         journal = {Physical Chemistry Chemical Physics},
           pages = {9806--9810},
             url = {http://oa.upm.es/48240/},
        abstract = {We report on the effect of Sb on the microstructure of GaInP layers grown by metal organic vapor phase epitaxy (MOVPE). These layers exhibit a CuPtB single variant ordering due to the intentional misorientation of the substrate (Ge(001) substrates with 6{\^A}?misorientation towards the nearest [111] axis). The use of Sb as a surfactant during the GaInP growth does not modify the type of ordering, but it is found that the order parameter ({\^I}?) decreases with increasing Sb flux. Dark field microscopy reveals a variation of the angle of the antiphase boundaries (APBs) with Sb amount. The microstructure is assessed through high angle annular dark field (HAADF) experiments and image simulation revealing Z-contrast loss in APBs due to the superposition of ordered domains. {\^A}{\copyright} the Owner Societies 2017.}
}