TY  - JOUR
N1  - Semiconductores III-V
ID  - upm48240
UR  - http://pubs.rsc.org/en/content/articlelanding/2017/cp/c7cp01125c#!divAbstract
IS  - 15
A1  - Coll, Catalina
A1  - Barrigón Montańés, Enrique
A1  - López-Conesa, L.
A1  - Rebled, J.
A1  - Barrutia Poncela, Laura
A1  - Rey-Stolle Prado, Ignacio
A1  - Estradé, S.
A1  - Algora del Valle, Carlos
A1  - Peiró, F.
Y1  - 2017/06//
N2  - We report on the effect of Sb on the microstructure of GaInP layers grown by metal organic vapor phase epitaxy (MOVPE). These layers exhibit a CuPtB single variant ordering due to the intentional misorientation of the substrate (Ge(001) substrates with 6°misorientation towards the nearest [111] axis). The use of Sb as a surfactant during the GaInP growth does not modify the type of ordering, but it is found that the order parameter (η) decreases with increasing Sb flux. Dark field microscopy reveals a variation of the angle of the antiphase boundaries (APBs) with Sb amount. The microstructure is assessed through high angle annular dark field (HAADF) experiments and image simulation revealing Z-contrast loss in APBs due to the superposition of ordered domains. © the Owner Societies 2017.
PB  - Royal Society of Chemistry
JF  - Physical Chemistry Chemical Physics
VL  - 19
SN  - 1463-9076
TI  - The effect of Sb-surfactant on GaInP CuPtB type ordering: Assessment through dark field TEM and aberration corrected HAADF imaging
SP  - 9806
AV  - public
EP  - 9810
ER  -