TY - JOUR N1 - Semiconductores III-V ID - upm48240 UR - http://pubs.rsc.org/en/content/articlelanding/2017/cp/c7cp01125c#!divAbstract IS - 15 A1 - Coll, Catalina A1 - Barrigón Montańés, Enrique A1 - López-Conesa, L. A1 - Rebled, J. A1 - Barrutia Poncela, Laura A1 - Rey-Stolle Prado, Ignacio A1 - Estradé, S. A1 - Algora del Valle, Carlos A1 - Peiró, F. Y1 - 2017/06// N2 - We report on the effect of Sb on the microstructure of GaInP layers grown by metal organic vapor phase epitaxy (MOVPE). These layers exhibit a CuPtB single variant ordering due to the intentional misorientation of the substrate (Ge(001) substrates with 6°misorientation towards the nearest [111] axis). The use of Sb as a surfactant during the GaInP growth does not modify the type of ordering, but it is found that the order parameter (η) decreases with increasing Sb flux. Dark field microscopy reveals a variation of the angle of the antiphase boundaries (APBs) with Sb amount. The microstructure is assessed through high angle annular dark field (HAADF) experiments and image simulation revealing Z-contrast loss in APBs due to the superposition of ordered domains. © the Owner Societies 2017. PB - Royal Society of Chemistry JF - Physical Chemistry Chemical Physics VL - 19 SN - 1463-9076 TI - The effect of Sb-surfactant on GaInP CuPtB type ordering: Assessment through dark field TEM and aberration corrected HAADF imaging SP - 9806 AV - public EP - 9810 ER -