%A Catalina Coll
%A Enrique Barrig?n Monta??s
%A L. L?pez-Conesa
%A J. Rebled
%A Laura Barrutia Poncela
%A Ignacio Rey-Stolle Prado
%A S. Estrad?
%A Carlos Algora del Valle
%A F. Peir?
%O Semiconductores III-V
%J Physical Chemistry Chemical Physics
%T The effect of Sb-surfactant on GaInP CuPtB type ordering: Assessment through dark field TEM and aberration corrected HAADF imaging
%X We report on the effect of Sb on the microstructure of GaInP layers grown by metal organic vapor phase epitaxy (MOVPE). These layers exhibit a CuPtB single variant ordering due to the intentional misorientation of the substrate (Ge(001) substrates with 6??misorientation towards the nearest [111] axis). The use of Sb as a surfactant during the GaInP growth does not modify the type of ordering, but it is found that the order parameter (??) decreases with increasing Sb flux. Dark field microscopy reveals a variation of the angle of the antiphase boundaries (APBs) with Sb amount. The microstructure is assessed through high angle annular dark field (HAADF) experiments and image simulation revealing Z-contrast loss in APBs due to the superposition of ordered domains. ?? the Owner Societies 2017.
%N 15
%P 9806-9810
%V 19
%D 2017
%I Royal Society of Chemistry
%R 10.1039/c7cp01125c
%L upm48240