%A Catalina Coll %A Enrique Barrig?n Monta??s %A L. L?pez-Conesa %A J. Rebled %A Laura Barrutia Poncela %A Ignacio Rey-Stolle Prado %A S. Estrad? %A Carlos Algora del Valle %A F. Peir? %O Semiconductores III-V %J Physical Chemistry Chemical Physics %T The effect of Sb-surfactant on GaInP CuPtB type ordering: Assessment through dark field TEM and aberration corrected HAADF imaging %X We report on the effect of Sb on the microstructure of GaInP layers grown by metal organic vapor phase epitaxy (MOVPE). These layers exhibit a CuPtB single variant ordering due to the intentional misorientation of the substrate (Ge(001) substrates with 6??misorientation towards the nearest [111] axis). The use of Sb as a surfactant during the GaInP growth does not modify the type of ordering, but it is found that the order parameter (??) decreases with increasing Sb flux. Dark field microscopy reveals a variation of the angle of the antiphase boundaries (APBs) with Sb amount. The microstructure is assessed through high angle annular dark field (HAADF) experiments and image simulation revealing Z-contrast loss in APBs due to the superposition of ordered domains. ?? the Owner Societies 2017. %N 15 %P 9806-9810 %V 19 %D 2017 %I Royal Society of Chemistry %R 10.1039/c7cp01125c %L upm48240