Items where Author is "Alén Millán, Benito"

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Article

Llorens Molina, Juan Antonio and Wewior, L. and Cardozo de Oliveira, E.R. and Ulloa Herrero, José María and Utrilla Lomas, Antonio David and Fernández González, Alvaro de Guzmán and Hierro Cano, Adrián and Alén Millán, Benito (2015). Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology. "Applied Physics Letters", v. 107 (n. 18); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4934841.

Ulloa Herrero, José María and Llorens, J.M. and Alén Millán, Benito and Reyes, D.F. and Sales, D.L. and Gonzalez, D. and Hierro Cano, Adrián (2012). High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing. "Applied Physics Letters", v. 101 (n. 25); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4773008.

González Taboada, Alfonso and Sanchez, A.M. and Beltran, A.M. and Bozkurt, M. and Alonso Alvarez, Diego and Alén Millán, Benito and Rivera de Mena, Antonio and Ripalda Cobián, Jose María and Llorens, J.M. and Martín-Sánchez, J.A. and González Diez, M. Yolanda and Ulloa Herrero, José María and García Martín, Jorge Miguel and Molina Rubio, Sergio Ignacio and Koenraad, P.M. (2010). Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots. "Physical Review B", v. 82 (n. 23); pp. 235316-1. ISSN 1550-235X. https://doi.org/10.1103/PhysRevB.82.235316.

Alonso Alvarez, Diego and González Taboada, Alfonso and Ripalda Cobián, Jose María and Alén Millán, Benito and González Diez, M. Yolanda and González Soto, Luisa and García Martín, Jorge Miguel and Martí Vega, Antonio and Luque López, Antonio and Briones Fernández-Pola, Fernando and Sanchez, A.M. and Molina Rubio, Sergio Ignacio (2008). Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells. "Applied Physics Letters", v. 93 (n. 12); pp. 123114-1. ISSN 0003-6951. https://doi.org/10.1063/1.2978243.

Presentation at Congress or Conference

Gonzalo, A. and Utrilla Lomas, Antonio David and Aeberhard, Urs and Llorens, J.M. and Alén Millán, Benito and Fuertes Marrón, David and Guzmán, A. and Hierro, A. and Ulloa Herrero, José María (2018). Type-II GaAsSb/GaAsN superlattice solar cells. In: "SPIE OPTO", 27/01/2018 - 01/02/2018, San Francisco, California,EE.UU. pp. 1052701-1052709. https://doi.org/10.1117/12.2290079.

Alonso Alvarez, Diego and Alén Millán, Benito and Ripalda Cobián, Jose María and González Taboada, Alfonso and Llorens, J.M. and González Diez, M. Yolanda and González Soto, Luisa and Briones Fernández-Pola, Fernando and Antolín Fernández, Elisa and Ramiro Gonzalez, Iñigo and Martí Vega, Antonio and Luque López, Antonio and Roldan, M.A. and Hernandez-Saz, J. and Herrera, M. and Molina Rubio, Sergio Ignacio (2010). Strain balanced quantum posts for intermediate band solar cells. In: "35th IEEE Photovoltaic Specialists Conference", 20/06/2010 - 25/06/2010, Honolulu, Hawaii, EEUU. ISBN 978-1-4244-5890-5.

Alonso Alvarez, Diego and González Taboada, Alfonso and González Diez, M. Yolanda and Ripalda Cobián, Jose María and Alén Millán, Benito and González Soto, Luisa and García Martín, Jorge Miguel and Luque López, Antonio and Martí Vega, Antonio and Briones Fernández-Pola, Fernando and Sánchez, Almudena M. and Molina Rubio, Sergio Ignacio (2008). Stress compensation by gap monolayers for stacked InAs/GaAs quantum dots solar cells. In: "33rd IEEE Photovoltaic Specialist Conference. PVSC '08", 11/05/2008-16/05/2008, San Diego, EEUU. ISBN 978-1-4244-1641. pp. 1719-1724.

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