Documentos en los que el autor es "Albert, Steven" (Tipo de Documento)

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Número de documentos: 28.

Artículo

Lopez Ponce, Manuel; Hierro Cano, Adrián; Marín Borras, V.; Tabares Jimenez, Gema; Kurtz de Griñó, Alejandro; Muñoz Merino, Elias; Albert, Steven; Agouram, Said; Muñoz Sanjosé, Vicente y Ulloa Herrero, José María (2015). Optical properties of ZnMgO films grown by spray pyrolysis and their application to UV photodetection. "Semiconductor Science and Technology", v. 30 (n. 10); pp.. ISSN 0268-1242. https://doi.org/10.1088/0268-1242/30/10/105026.

Albert, Steven; Bengoechea Encabo, Ana; Kong, Xiang; Sánchez García, Miguel Ángel; Trampert, Achim y Calleja Pardo, Enrique (2015). Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy. "Crystal Growth & Design", v. 15 (n. 6); pp. 2661-2666. ISSN 1528-7483. https://doi.org/10.1021/cg501798j.

Gacevic, Zarko; Bengoechea Encabo, Ana; Albert, Steven; Torres Pardo, Almudena; González Calbet, José María y Calleja Pardo, Enrique (2015). Crystallographically uniform arrays of ordered (In) GaN Nanocolumns. "Journal of Applied Physics", v. 117 (n. 3); pp.. ISSN 0022-0248. https://doi.org/10.1063/1.4905951.

Albert, Steven; Bengoechea Encabo, Ana; Ledig, Johannes; Schimpke, Tilman; Sánchez García, Miguel Ángel; Strassburg, Martin; Waag, Andreas y Calleja Pardo, Enrique (2015). Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars. "Crystal Growth & Design", v. 15 (n. 8); pp. 3661-3665. ISSN 1528-7483. https://doi.org/10.1021/acs.cgd.5b00235.

Niehle, M.; Trampert, Achim; Albert, Steven; Bengoechea Encabo, Ana y Calleja Pardo, Enrique (2015). Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates. "APL Materials", v. 3 (n. 3); pp.. ISSN 2166-532X. https://doi.org/10.1063/1.4914102.

Kong, Xiang; Albert, Steven; Bengoechea Encabo, Ana; Sánchez García, Miguel Angel; Calleja Pardo, Enrique; Calle Gómez, Fernando y Trampert, Achim (2015). Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate. "Physica Status Solidi A-Applications and materials science", v. 212 (n. 4); pp. 736-739. ISSN 1862-6300. https://doi.org/10.1002/pssa.201400198.

Bengoechea Encabo, Ana; Albert, Steven; López-Romero Moraleda, David; Lefebvre, P.; Barbagini, Francesca; Torres Pardo, Almudena; González Calbet, José María; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2014). Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range. "Nanotechnology", v. 25 (n. 43); pp.. ISSN 0957-4484. https://doi.org/10.1088/0957-4484/25/43/435203.

Albert, Steven; Bengoechea Encabo, Ana; Barbagini, Francesca; López Romero, David; Sánchez García, Miguel Angel; Calleja Pardo, Enrique; Lefebvre, Pierre; Kong, Xiang; Jahn, Uwe; Trampert, Achim; Müller, Marcus; Bertram, Frank; Schmidt, Gordon; Veit, Peter; Petzold, Silke; Christen, Jürgen; Mierry, Philippe de y Zuñiga Pérez, Jesús (2014). Advances on MBE selective area growth of III-nitride nanostructures: from nanoLEDs to pseudo substrates. "International Journal of High Speed Electronics and Systems", v. 23 (n. 3-4); pp.. ISSN 1793-6438. https://doi.org/10.1142/S0129156414500207.

Barbagini, Francesca; Bengoechea Encabo, Ana; Albert, Steven; Lefebvre, P.; Martinez Rodrigo, Javier; Sánchez García, Miguel Angel; Trampert, Achim y Calleja Pardo, Enrique (2012). E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods. "Microelectronic Engineering", v. 98 ; pp. 374-377. ISSN 0167-9317. https://doi.org/10.1016/j.mee.2012.07.024.

Martinez Rodrigo, Javier; Barbagini, Francesca; Bengoechea Encabo, Ana; Albert, Steven; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2012). Fabrication of GaN nanorods by focused ion beam. "Microelectronic Engineering", v. 98 ; pp. 250-253. ISSN 0167-9317. https://doi.org/10.1016/j.mee.2012.07.006.

Lefebvre, P.; Albert, Steven; Ristic, Jelena; Fernández-Garrido, Sergio; Grandal Quintana, Javier; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2012). Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns. "Superlattices and Microstructures", v. 52 (n. 2); pp. 165-171. ISSN 0749-6036. https://doi.org/10.1016/j.spmi.2012.05.001.

Albert, Steven; Bengoechea Encabo, Ana; Lefebvre, P.; Barbagini, Francesca; Sánchez García, Miguel Angel; Calleja Pardo, Enrique; Jahn, U. y Trampert, Achim (2012). Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies. "Applied Physics Letters", v. 100 (n. 23); pp. 1-4. ISSN 0022-0248. https://doi.org/10.1063/1.4728115.

Albert, Steven; Bengoechea Encabo, Ana; Sánchez García, Miguel Angel; Barbagini, Francesca; Calleja Pardo, Enrique; Luna García de la Infanta, Esperanza; Trampert, Achim; Jahn, U.; Lefebvre, P.; López, L.L.; Estradé, S.; Rebled, J.M.; Peiró, F.; Nataf, G.; Mierry, P. de y Zuniga Perez, J. (2012). Ordered gan/ingan nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission. "International Journal of High Speed Electronics", v. 21 (n. 1); pp. 1250010-1250034. ISSN 0129-1564. https://doi.org/10.1142/S0129156412500103.

Barbagini, Francesca; Bengoechea Encabo, Ana; Albert, Steven; Martinez Rodrigo, Javier; Sánchez García, Miguel Angel; Trampert, Achim y Calleja Pardo, Enrique (2011). Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns.. "Nanoscale research letters", v. 6 (n. 1); pp. 632-641. ISSN 1556-276X. https://doi.org/10.1186/1556-276X-6-632.

Albert, Steven; Bengoechea Encabo, Ana; Lefebvre, P.; Sánchez García, Miguel Angel; Calleja Pardo, Enrique; Sánchez García, Miguel Angel; Jahn, U. y Trampert, Achim (2011). Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates. "Applied Physics Letters", v. 99 (n. 13); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.3644986.

Ponencia en Congreso o Jornada

Sánchez García, Miguel Ángel; Albert, Steven; Bengoechea Encabo, Ana; Calleja Pardo, Enrique; Trampert, Achim y Zuniga Perez, J. (2015). Morphology and optical properties of ordered GaN and InGaN nanocolumns grown on non-polar and semipolar orientations. En: "2015 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic materials and Devices", 11/07/2015 - 14/07/215, Kyoto, Japan.

Albert, Steven; Bengoechea Encabo, Ana; Sabido Siller, María del Carmen; Müller, M.; Schmidt, G.; Metzner, S.; Veit, P.; Bertram, F.; Sánchez García, Miguel Angel; Christen, J. y Calleja Pardo, Enrique (2014). Growth and characterization of InGaN/GaN core-shell structures by molecular beam epitaxy. En: "8th International Workshop on Nitride Semicon- ductors (IWN 2014)", 24/08/2014 - 29/08/2014, Wroclaw, Poland. pp. 1-6.

Sánchez García, Miguel Angel; Albert, Steven; Bengoechea Encabo, Ana; Calleja Pardo, Enrique; Trampert, Achim; Jahn, U.; López, L.L.; Estradé, S.; Rebled, J.M.; Peiró, F.; Nataf, G.; Mierry, P. de y Zuniga Perez, J. (2012). Influence of substrate type and orientation on the morphology and optical properties of selective area growth of GaN and InGaN nanocolumns. En: "2012 German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices,", 21/07/2012 - 22/07/2012, Berlin, Germany.

Bengoechea Encabo, Ana; Albert, Steven; Barbagini, Francesca; Lefebvre, P.; Sánchez García, Miguel Angel; Calleja Pardo, Enrique; Luna García de la Infanta, Esperanza y Trampert, Achim (2011). Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted. En: "9th International Conference on Nitride Semiconductors - ICNS9", 10/07/2011 - 15/07/2011, Glasgow, UK. pp..

Barbagini, Francesca; Martinez Rodrigo, Javier; Bengoechea Encabo, Ana; Albert, Steven; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2011). E-beam nanopatterning for the selective area growth of III-V nitride nanorods. En: "37th International Conference on Micro and Nano Engineering", 10/09/2011 - 23/09/2011, Berlin, Alemania. pp..

Calleja Pardo, Enrique; Bengoechea Encabo, Ana; Albert, Steven; Sánchez García, Miguel Angel; Barbagini, Francesca; Luna, E.; Trampert, Achim; Jahn, U. y Lefebvre, P. (2011). Efficient phosphor-free, white light emission from ordered arrays of GaN/InGaN nanocolumnar LEDs grown by Selective Area MBE. En: "Workshop On Frontiers in Electronics 2011. WOFE-2011", 18/11/2011 - 21/11/2011, San Juan, Puerto Rico. pp..

Martinez Rodrigo, Javier; Barbagini, Francesca; Bengoechea Encabo, Ana; Albert, Steven; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2011). Fabrication of GaN nanorods by focused ion beam. En: "37th International Conference on Micro and Nano Engineering", 19/09/2011 - 23/09/2011, Berlín, Alemania. pp..

Brazzini, Tommaso; Albert, Steven; Das, A.; Gacevic, Zarko; Monroy, E.; Sánchez García, Miguel Angel y Calle Gómez, Fernando (2011). InN/GaN heterojunction electrical behavior. En: "9th International Conference on Nitride Semiconductors", 10/07/2011 - 15/07/2011, Glasgow, UK. pp..

Sánchez García, Miguel Angel; Albert, Steven; Bengoechea Encabo, Ana; Barbagini, Francesca; Lefebvre, P. y Calleja Pardo, Enrique (2011). MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates. En: "2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices", 16/03/2011 - 18/03/2011, Granada, España.

Lefebvre, P.; Albert, Steven; Ristic, Jelena; Fernández-Garrido, Sergio; Grandal Quintana, Javier; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2011). Surface-related optical properties of GaN and InGaN nanocolumns. En: "E-MRS Srping Meeting", 10/05/2011 - 12/05/2011, Niza, Francia.

Calleja Pardo, Enrique; Bengoechea Encabo, Ana; Albert, Steven; Sánchez García, Miguel Angel; Barbagini, Francesca; Luna, E.; Trampert, Achim; Jahn, U. y Lefebvre, F. (2011). Understanding the Selective Area Nucleation and Growth of GaN nanocolumns by MBE using Ti nanomasks. En: "2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices", 16/03/2011 - 18/03/2011, Granada, España.

Albert, Steven; Bengoechea Encabo, Ana; Sabido Siller, María del Carmen; Müller, M.; Schmidt, G.; Metzner, S.; Veit, P.; Bertram, F.; Sánchez García, Miguel Angel; Christen, J. y Calleja Pardo, Enrique (2014). Growth of InGaN/GaN core-shell structures by molecular beam epitaxy. En: "European Materials Research Society (E-MRS) 2014 Spring Meeting", 19/05/2014 - 26/05/2014, Lille, France. pp. 1-4.

Tesis

Albert, Steven (2015). Self assembled and ordered group III nitride nanocolumnar structures for light emitting applications. Tesis (Doctoral), E.T.S.I. Telecomunicación (UPM).

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