Number of items: 6.
Article
Cuerdo Bragado, Roberto and Calle Gómez, Fernando and Braña, A.F. and Cordier, Y. and Azize, M. and Baron, N. and Chenot, S. and Muñoz Merino, Elias (2008) High temperature behavior of GaN HEMT devices on Si(111) and sapphire substrates. Physica Status Solidi C Basic Solid State Physics, 5 (6). 1971 - 1973. ISSN 0370-1972
Cuerdo Bragado, Roberto and Pei, Y. and Recht, F. and Fichtenbaum, N. and Keller, S. and DenBaars, S.P. and Calle Gómez, Fernando and Mishra, U.K. (2008) Temperature-dependent High-Frequency Performance of Deep Submicron Ion-Implanted AlGaN/GaN HEMTs. Physica Status Solidi C, 5 (9). 2994 - 2997. ISSN 0370-1972
Romero Rojo, Fátima and Jiménez, A. and Sánchez, Jose M. and Braña, A.F. and González-Posada Flores, Fernando and Cuerdo Bragado, Roberto and Calle Gómez, Fernando and Muñoz Merino, Elias (2008) Effects of N2 Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT. IEEE Electron Device Letters, 29 (3). pp. 209-211. ISSN 0741-3106
Sillero Herrero, Eugenio and López-Romero Moraleda, David and Bengoechea Encabo, A. and Sánchez García, Miguel Angel and Calle Gómez, Fernando (2008) Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111). Physica Status Solidi C, 5 (6). 1974 - 1976. ISSN 0370-1972
Presentation at Congress or Day
Cuerdo Bragado, Roberto and Sillero Herrero, Eugenio and Romero Rojo, Fátima and Uren, M. and Muñoz Merino, Elias and Calle Gómez, Fernando (2008) DC and RF Performance of AlGaN/GaN HEMTs on SiC at High Temperatures. In: The 5th International Workshop on Nitride semiconductors (IWN2008), 06/10/2008-10/10/2008, Montreaux (Suiza).
Sillero Herrero, Eugenio and Eickhoff, M. and Calle Gómez, Fernando (2008) Nanoporous GaN by UV assisted electroless etching for sensor applications. In: The 5th International Workshop on Nitride semiconductors (IWN2008), 06/10/2008-10/10/2008, Montreaux, Suiza.
This list was generated on Fri May 25 19:07:15 2012 CEST.
