Documentos en los que el autor es "Calleja Pardo, Enrique"

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Número de documentos: 52.

Soto Rodríguez, Paul; Aseev, Pavel; Gómez Hernández, Víctor Jesús; Ul Hassan Alvi, Naveed; Calleja Pardo, Enrique; Manuel, José M.; Morales Sánchez, Francisco Miguel; Kumar, Praveen; Jiménez, Juan J.; García, Rafael; Senichev, Alexander; Lienau, Christoph y Nötzel, Richard (2015). Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111). "Applied Physics Letters", v. 106 (n. 2); pp.. ISSN 0003-6951.

Albert, Steven; Bengoechea Encabo, Ana; Kong, Xiang; Sánchez García, Miguel Ángel; Trampert, Achim y Calleja Pardo, Enrique (2015). Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy. "Crystal Growth & Design", v. 15 (n. 6); pp. 2661-2666. ISSN 1528-7483.

Albert, Steven; Bengoechea Encabo, Ana; Ledig, Johannes; Schimpke, Tilman; Sánchez García, Miguel Ángel; Strassburg, Martin; Waag, Andreas y Calleja Pardo, Enrique (2015). Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars. "Crystal Growth & Design", v. 15 (n. 8); pp. 3661-3665. ISSN 1528-7483.

Niehle, M.; Trampert, Achim; Albert, Steven; Bengoechea Encabo, Ana y Calleja Pardo, Enrique (2015). Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates. "APL Materials", v. 3 (n. 3); pp.. ISSN 2166-532X.

Kong, Xiang; Albert, Steven; Bengoechea Encabo, Ana; Sánchez García, Miguel Angel; Calleja Pardo, Enrique; Calle Gómez, Fernando y Trampert, Achim (2015). Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate. "Physica Status Solidi A-Applications and materials science", v. 212 (n. 4); pp. 736-739. ISSN 1862-6300.

Sánchez García, Miguel Ángel; Albert, Steven; Bengoechea Encabo, Ana; Calleja Pardo, Enrique; Trampert, Achim y Zuniga Perez, J. (2015). Morphology and optical properties of ordered GaN and InGaN nanocolumns grown on non-polar and semipolar orientations. En: "2015 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic materials and Devices", 11/07/2015 - 14/07/215, Kyoto, Japan.

Albert, S.; Bengoechea Encabo, Ana; López Romero, David; Mierry, Philippe de; Zuñiga Pérez, Jesús; Kong, Xiang; Trampert, Achim; Sánchez García, Miguel Ángel y Calleja Pardo, Enrique (2015). Selective Area Growth of III- Nitride Nanorods on polar, semi-polar and non-polar orientations: Device applications. En: "Quantum Sensing and Nanophotonic Devices XII", 08/02/2015 - 12/02/2015, San Francisco, California, USA. pp..

Bengoechea Encabo, Ana; Albert, Steven; López-Romero Moraleda, David; Lefebvre, P.; Barbagini, Francesca; Torres Pardo, Almudena; González Calbet, José María; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2014). Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range. "Nanotechnology", v. 25 (n. 43); pp.. ISSN 0957-4484.

Albert, Steven; Bengoechea Encabo, Ana; Barbagini, Francesca; López Romero, David; Sánchez García, Miguel Angel; Calleja Pardo, Enrique; Lefebvre, Pierre; Kong, Xiang; Jahn, Uwe; Trampert, Achim; Müller, Marcus; Bertram, Frank; Schmidt, Gordon; Veit, Peter; Petzold, Silke; Christen, Jürgen; Mierry, Philippe de y Zuñiga Pérez, Jesús (2014). Advances on MBE selective area growth of III-nitride nanostructures: from nanoLEDs to pseudo substrates. "International Journal of High Speed Electronics and Systems", v. 23 (n. 3-4); pp.. ISSN 1793-6438.

Albert, Steven; Bengoechea Encabo, Ana; Sabido Siller, María del Carmen; Müller, M.; Schmidt, G.; Metzner, S.; Veit, P.; Bertram, F.; Sánchez García, Miguel Angel; Christen, J. y Calleja Pardo, Enrique (2014). Growth and characterization of InGaN/GaN core-shell structures by molecular beam epitaxy. En: "8th International Workshop on Nitride Semicon- ductors (IWN 2014)", 24/08/2014 - 29/08/2014, Wroclaw, Poland. pp. 1-6.

Gómez Hernández, Víctor Jesús; Gacevic, Zarko; Aseev, Pavel; Soto Rodríguez, Paul; Kumar, Praveen; Calleja Pardo, Enrique; Nötzel, Richard y Sánchez García, Miguel Ángel (2014). XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire. En: "International Workshop on Nitride Semiconductors (IWN2014)", 24/08/2014 - 29/08/2014, Wroclaw, Poland. p. 1.

Gacevic, Zarko; Gómez Hernández, Víctor Jesús; García Lepetit, Noemí; Soto Rodríguez, Paul; Bengoechea Encabo, Ana; Fernández Garrido, Sergio; Nötzel, R. y Calleja Pardo, Enrique (2013). A comprehensive diagram to grow metal-polarity InGaN alloys by molecular beam epitaxy. "Journal of Crystal Growth", v. 364 ; pp. 123-127. ISSN 0003-6951.

Barbagini, Francesca; Bengoechea Encabo, Ana; Albert, Steven; Lefebvre, P.; Martinez Rodrigo, Javier; Sánchez García, Miguel Angel; Trampert, Achim y Calleja Pardo, Enrique (2012). E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods. "Microelectronic Engineering", v. 98 ; pp. 374-377. ISSN 0167-9317.

Martinez Rodrigo, Javier; Barbagini, Francesca; Bengoechea Encabo, Ana; Albert, Steven; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2012). Fabrication of GaN nanorods by focused ion beam. "Microelectronic Engineering", v. 98 ; pp. 250-253. ISSN 0167-9317.

Lefebvre, P.; Albert, Steven; Ristic, Jelena; Fernández-Garrido, Sergio; Grandal Quintana, Javier; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2012). Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns. "Superlattices and Microstructures", v. 52 (n. 2); pp. 165-171. ISSN 0749-6036.

Bengoechea Encabo, Ana; Steven, Albert; Sánchez García, Miguel Angel; López, L.L.; Estradé, S.; Rebled, J.M.; Peiró, F.; Nataf, G.; Mierry, P. de; Zuniga Perez, J. y Calleja Pardo, Enrique (2012). Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography. "Journal of Crystal Growth", v. 353 (n. 1); pp. 1-4. ISSN 0022-0248.

Albert, Steven; Bengoechea Encabo, Ana; Lefebvre, P.; Barbagini, Francesca; Sánchez García, Miguel Angel; Calleja Pardo, Enrique; Jahn, U. y Trampert, Achim (2012). Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies. "Applied Physics Letters", v. 100 (n. 23); pp. 1-4. ISSN 0022-0248.

Sánchez García, Miguel Angel; Albert, Steven; Bengoechea Encabo, Ana; Calleja Pardo, Enrique; Trampert, Achim; Jahn, U.; López, L.L.; Estradé, S.; Rebled, J.M.; Peiró, F.; Nataf, G.; Mierry, P. de y Zuniga Perez, J. (2012). Influence of substrate type and orientation on the morphology and optical properties of selective area growth of GaN and InGaN nanocolumns. En: "2012 German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices,", 21/07/2012 - 22/07/2012, Berlin, Germany.

Eljarrat, A.; Estradé, S.; Gacevic, Zarko; Fernández-Garrido, Sergio; Calleja Pardo, Enrique; Magén, C. y Peiró, F. (2012). Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence. "Microscopy and Microanalysis", v. 18 ; pp. 1143-1154. ISSN 1431-9276.

Albert, Steven; Bengoechea Encabo, Ana; Sánchez García, Miguel Angel; Barbagini, Francesca; Calleja Pardo, Enrique; Luna García de la Infanta, Esperanza; Trampert, Achim; Jahn, U.; Lefebvre, P.; López, L.L.; Estradé, S.; Rebled, J.M.; Peiró, F.; Nataf, G.; Mierry, P. de y Zuniga Perez, J. (2012). Ordered gan/ingan nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission. "International Journal of High Speed Electronics", v. 21 (n. 1); pp. 1250010-1250034. ISSN 0129-1564.

Barbagini, Francesca; Bengoechea Encabo, Ana; Albert, Steven; Martinez Rodrigo, Javier; Sánchez García, Miguel Angel; Trampert, Achim y Calleja Pardo, Enrique (2011). Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns.. "Nanoscale research letters", v. 6 (n. 1); pp. 632-641. ISSN 1556-276X.

Albert, Steven; Bengoechea Encabo, Ana; Lefebvre, P.; Sánchez García, Miguel Angel; Calleja Pardo, Enrique; Sánchez García, Miguel Angel; Jahn, U. y Trampert, Achim (2011). Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates. "Applied Physics Letters", v. 99 (n. 13); pp.. ISSN 0003-6951.

Grandal Quintana, Javier; Pereiro Viterbo, Juan; Bengoechea Encabo, Ana; Fernández-Garrido, Sergio; Sánchez García, Miguel Angel; Muñoz Merino, Elias; Calleja Pardo, Enrique; Luna García de la Infanta, Esperanza y Trampert, Achim (2011). InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy. "Applied Physics Letters", v. 98 (n. 6); pp.. ISSN 0003-6951.

Bengoechea Encabo, Ana; Albert, Steven; Barbagini, Francesca; Lefebvre, P.; Sánchez García, Miguel Angel; Calleja Pardo, Enrique; Luna García de la Infanta, Esperanza y Trampert, Achim (2011). Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted. En: "9th International Conference on Nitride Semiconductors - ICNS9", 10/07/2011 - 15/07/2011, Glasgow, UK. pp..

Barbagini, Francesca; Martinez Rodrigo, Javier; Bengoechea Encabo, Ana; Albert, Steven; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2011). E-beam nanopatterning for the selective area growth of III-V nitride nanorods. En: "37th International Conference on Micro and Nano Engineering", 10/09/2011 - 23/09/2011, Berlin, Alemania. pp..

Calleja Pardo, Enrique; Bengoechea Encabo, Ana; Albert, Steven; Sánchez García, Miguel Angel; Barbagini, Francesca; Luna, E.; Trampert, Achim; Jahn, U. y Lefebvre, P. (2011). Efficient phosphor-free, white light emission from ordered arrays of GaN/InGaN nanocolumnar LEDs grown by Selective Area MBE. En: "Workshop On Frontiers in Electronics 2011. WOFE-2011", 18/11/2011 - 21/11/2011, San Juan, Puerto Rico. pp..

Martinez Rodrigo, Javier; Barbagini, Francesca; Bengoechea Encabo, Ana; Albert, Steven; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2011). Fabrication of GaN nanorods by focused ion beam. En: "37th International Conference on Micro and Nano Engineering", 19/09/2011 - 23/09/2011, Berlín, Alemania. pp..

Gacevic, Zarko; Lefebvre, P.; Calleja Pardo, Enrique; Bertram, F.; Schmidt, G.; Veit, P. y Christen, J. (2011). Growth and characterization of InGaN/GaN quantum dots for violet/blue applications. En: "International Conference on Nitride Semiconductors 2011", 10/07/2011 - 15/07/2011, Glasgow, UK. pp. 1-3.

Gacevic, Zarko; Fernández-Garrido, Sergio; Rebled, J.M.; Estradé, S.; Peiró, F. y Calleja Pardo, Enrique (2011). High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy. "Applied Physics Letters", v. 99 (n. 3); pp.. ISSN 0003-6951.

Sánchez García, Miguel Angel; Albert, Steven; Bengoechea Encabo, Ana; Barbagini, Francesca; Lefebvre, P. y Calleja Pardo, Enrique (2011). MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates. En: "2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices", 16/03/2011 - 18/03/2011, Granada, España.

Eljarrat, A.; Gacevic, Zarko; Fernández-Garrido, Sergio; Calleja Pardo, Enrique; Magén, C.; Estradé, S. y Peiró, F. (2011). Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy. En: "2nd Joint Congress Of The Portuguese And Spanish Microscopy Societies", 18/10/2011 - 21/10/2012, Aveiro, Portugal. pp. 1-3.

Gacevic, Zarko; Fernández-Garrido, Sergio; Calleja Pardo, Enrique; Hosseini, D.; Estradé, S. y Peiró, F. (2011). Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy. En: "16th European Molecular Beam Epitaxy Workshop, Euro MEB 2011", 20/03/2011 - 23/03/2011, AlpesFranceses, Francia.

Lefebvre, P.; Albert, Steven; Ristic, Jelena; Fernández-Garrido, Sergio; Grandal Quintana, Javier; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2011). Surface-related optical properties of GaN and InGaN nanocolumns. En: "E-MRS Srping Meeting", 10/05/2011 - 12/05/2011, Niza, Francia.

Calleja Pardo, Enrique; Bengoechea Encabo, Ana; Albert, Steven; Sánchez García, Miguel Angel; Barbagini, Francesca; Luna, E.; Trampert, Achim; Jahn, U. y Lefebvre, F. (2011). Understanding the Selective Area Nucleation and Growth of GaN nanocolumns by MBE using Ti nanomasks. En: "2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices", 16/03/2011 - 18/03/2011, Granada, España.

Bengoechea Encabo, Ana; Barbagini, Francesca; Fernández-Garrido, Sergio; Grandal Quintana, Javier; Ristic, Jelena; Sánchez García, Miguel Angel; Calleja Pardo, Enrique; Jahn, U.; Luna García de la Infanta, Esperanza y Trampert, Achim (2011). Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks. "Journal of Crystal Growth", v. 325 (n. 1); pp. 89-92. ISSN 0022-0248.

Redondo-Cubero, Andrés; Lorenz, K.; Franco, N.; Fernández-Garrido, Sergio; Gago, R.; Smulders, P.J.M.; Muñoz Merino, Elias; Calleja Pardo, Enrique y Alves, E. (2010). Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channellin. En: "51st Workshop of the INFN Eloisatron Project", 25/10/2008-01/11/2008, Erice, Italia. ISBN 978-981-4307-00-0.

Gacevic, Zarko; Fernández-Garrido, Sergio; Calleja Pardo, Enrique; Luna García de la Infanta, Esperanza y Trampert, Achim (2009). Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy. "Physica Status Solidi B-Basic Solid State Physics", v. 6 (n. 6-S2); pp.. ISSN 0370-1972.

Edwards, P.R.; Martin, R.W; Bejtka, K.; O´Donnell, K.P.; Fernández-Garrido, Sergio y Calleja Pardo, Enrique (2009). Correlating Composition and Luminescence Variations in AlInGaN epilayers. En: "9th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, BIAMS 2008", 29/06/2008-03/07/2008, Toledo, España. ISBN 0749-6036.

Fernández-Garrido, Sergio; Calleja Pardo, Enrique y Gacevic, Zarko (2008). A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy. "Physical Review Letters", v. 93 (n. 19); pp.. ISSN 0031-9007.

Fernández-Garrido, Sergio; Gacevic, Zarko y Calleja Pardo, Enrique (2008). A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy. "Applied Physics Letters", v. 93 (n. 19); pp.. ISSN 0003-6951.

Bejtka, K.; Edwards, P.R.; Martin, R.W; Fernández-Garrido, Sergio y Calleja Pardo, Enrique (2008). Composition and luminiscence of AllnGaNAN layers grown by plasma-assisted molecular beam epitaxy. "Journal of Applied Physics", v. 104 (n. 7); pp.. ISSN 0021-8979.

Fernández-Garrido, Sergio; Redondo-Cubero, Andrés; Gago, R.; Bertram, F.; Christen, J.; Luna García de la Infanta, Esperanza; Trampert, Achim; Pereiro Viterbo, Juan; Muñoz Merino, Elias y Calleja Pardo, Enrique (2008). Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy. "Journal of Applied Physics", v. 104 (n. 8); pp.. ISSN 0021-8979.

Ibáñez Insa, Jordi; Domènech Hernández, Sònia; Alarcón-Lladó, Esther; Cuscó Cornet, Ramón; Artús Surroca, Lluis; Novikov, S.V.; Foxon, C.T. y Calleja Pardo, Enrique (2008). Far-infrared transmission in GaN,AlN and AlGaN thin films grown by molecular beam epitaxy. "Journal of Applied Physics", v. 104 (n. 3); pp.. ISSN 0021-8979.

Fernández-Garrido, Sergio; Koblmüller, Gregor; Calleja Pardo, Enrique y Speck, James S. (2008). In-situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction. "Journal of Applied Physics", v. 104 (n. 3); pp.. ISSN 0021-8979.

Ristic, Jelena; Calleja Pardo, Enrique; Fernández-Garrido, Sergio; Trampert, Achim; Cerutti, Laurent; Jahn, U. y Ploog, K.H. (2008). On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy. "Journal of Crystal Growth", v. 310 (n. 18); pp. 4035-4045. ISSN 0022-0248.

Lazic, Snezana; Gallardo Velasco, Eva María; Calleja Pardo, José Manuel; Agulló-Rueda, Fernando; Grandal Quintana, Javier; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2008). Raman scattering by coupled plasmon-LO phonons in InN nanocolumns. "Physica Status Solidi C", v. 5 (n. 6); pp. 1562-1564. ISSN 0370-1972.

Niebelschutz, M.; Cimalla, V.; Ambacher, O.; Machleidt, T.; Franke, K-H; Ristic, Jelena; Grandal Quintana, Javier; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2008). Space charged region in GaN and InN nanocolumns investigated by Atomic Force Microscopy. "Physica Status Solidi B", v. 5 (n. 6); pp. 1609-1611. ISSN 0370-1972.

Jahn, U.; Calleja Pardo, Enrique; Ristic, Jelena; Trampert, Achim y Rivera de Lucas, Carlos (2008). Spatially Resolved Luminescence Spectroscopy of Single GaN/(Al,Ga)N Quantum Disks. "physica status solidi C", v. 5 (n. 6); pp. 2164-2166. ISSN 0370-1972.

Lazic, Snezana; Gallardo Velasco, Eva María; Calleja Pardo, José Manuel; Agulló-Rueda, Fernando; Grandal Quintana, Javier; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2008). Raman scattering by longitudinal optical phonons in InN nanocolumns grown on Si(111) and Si(001) substrates. "Physica E: Low-dimensional Systems and Nanostructures", v. 40 (n. 6); pp. 2087-2090. ISSN 1386-9477.

Fernández-Garrido, Sergio; Pereiro Viterbo, Juan; González-Posada Flores, Fernando; Muñoz Merino, Elias; Calleja Pardo, Enrique; Redondo-Cubero, Andrés y Gago, R. (2008). Photoluminiscence enhancement in quaternay III-nitrides alloys grown by molecular beam epitaxy with increasing Al content. "Journal of Applied Physics", v. 103 (n. 4); pp.. ISSN 0021-8979.

Bailey, L.R.; King, P.D.C.; Veal, T.D.; McConville, Chris F.; Pereiro Viterbo, Juan; Grandal Quintana, Javier; Sánchez García, Miguel Angel; Muñoz Merino, Elias y Calleja Pardo, Enrique (2008). Band bending at In-rich InGaN surfaces. "Journal of Applied Physics", v. 104 (n. 11); pp.. ISSN 0021-8979.

Albert, Steven; Bengoechea Encabo, Ana; Sabido Siller, María del Carmen; Müller, M.; Schmidt, G.; Metzner, S.; Veit, P.; Bertram, F.; Sánchez García, Miguel Angel; Christen, J. y Calleja Pardo, Enrique (2014). Growth of InGaN/GaN core-shell structures by molecular beam epitaxy. En: "European Materials Research Society (E-MRS) 2014 Spring Meeting", 19/05/2014 - 26/05/2014, Lille, France. pp. 1-4.

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