Documentos en los que el autor es "Fernández-Garrido, Sergio" (Tipo de Documento)

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Número de documentos: 18.

Artículo

Lefebvre, P.; Albert, Steven; Ristic, Jelena; Fernández-Garrido, Sergio; Grandal Quintana, Javier; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2012). Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns. "Superlattices and Microstructures", v. 52 (n. 2); pp. 165-171. ISSN 0749-6036. https://doi.org/10.1016/j.spmi.2012.05.001.

Eljarrat, A.; Estradé, S.; Gacevic, Zarko; Fernández-Garrido, Sergio; Calleja Pardo, Enrique; Magén, C. y Peiró, F. (2012). Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence. "Microscopy and Microanalysis", v. 18 ; pp. 1143-1154. ISSN 1431-9276. https://doi.org/10.1017/S1431927612001328.

Grandal Quintana, Javier; Pereiro Viterbo, Juan; Bengoechea Encabo, Ana; Fernández-Garrido, Sergio; Sánchez García, Miguel Angel; Muñoz Merino, Elias; Calleja Pardo, Enrique; Luna García de la Infanta, Esperanza y Trampert, Achim (2011). InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy. "Applied Physics Letters", v. 98 (n. 6); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.3552195.

Gacevic, Zarko; Fernández-Garrido, Sergio; Rebled, J.M.; Estradé, S.; Peiró, F. y Calleja Pardo, Enrique (2011). High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy. "Applied Physics Letters", v. 99 (n. 3); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.3614434.

Bengoechea Encabo, Ana; Barbagini, Francesca; Fernández-Garrido, Sergio; Grandal Quintana, Javier; Ristic, Jelena; Sánchez García, Miguel Angel; Calleja Pardo, Enrique; Jahn, U.; Luna García de la Infanta, Esperanza y Trampert, Achim (2011). Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks. "Journal of Crystal Growth", v. 325 (n. 1); pp. 89-92. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2011.04.035.

Gacevic, Zarko; Fernández-Garrido, Sergio; Calleja Pardo, Enrique; Luna García de la Infanta, Esperanza y Trampert, Achim (2009). Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy. "Physica Status Solidi B-Basic Solid State Physics", v. 6 (n. 6-S2); pp.. ISSN 0370-1972. https://doi.org/10.1002/pssc.200880833.

Fernández-Garrido, Sergio; Gacevic, Zarko y Calleja Pardo, Enrique (2008). A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy. "Applied Physics Letters", v. 93 (n. 19); pp. 191907-1. ISSN 0003-6951. https://doi.org/10.1063/1.3026541.

Bejtka, K.; Edwards, P.R.; Martin, R.W; Fernández-Garrido, Sergio y Calleja Pardo, Enrique (2008). Composition and luminiscence of AllnGaNAN layers grown by plasma-assisted molecular beam epitaxy. "Journal of Applied Physics", v. 104 (n. 7); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.2993549.

Fernández-Garrido, Sergio; Redondo-Cubero, Andrés; Gago, R.; Bertram, F.; Christen, J.; Luna García de la Infanta, Esperanza; Trampert, Achim; Pereiro Viterbo, Juan; Muñoz Merino, Elias y Calleja Pardo, Enrique (2008). Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy. "Journal of Applied Physics", v. 104 (n. 8); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.2999564.

Fernández-Garrido, Sergio; Koblmüller, Gregor; Calleja Pardo, Enrique y Speck, James S. (2008). In-situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction. "Journal of Applied Physics", v. 104 (n. 3); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.2968442.

Ristic, Jelena; Calleja Pardo, Enrique; Fernández-Garrido, Sergio; Trampert, Achim; Cerutti, Laurent; Jahn, U. y Ploog, K.H. (2008). On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy. "Journal of Crystal Growth", v. 310 (n. 18); pp. 4035-4045. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2008.05.057.

Fernández-Garrido, Sergio; Pereiro Viterbo, Juan; González-Posada Flores, Fernando; Muñoz Merino, Elias; Calleja Pardo, Enrique; Redondo-Cubero, Andrés y Gago, R. (2008). Photoluminiscence enhancement in quaternay III-nitrides alloys grown by molecular beam epitaxy with increasing Al content. "Journal of Applied Physics", v. 103 (n. 4); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.2874451.

Ponencia en Congreso o Jornada

Eljarrat, A.; Gacevic, Zarko; Fernández-Garrido, Sergio; Calleja Pardo, Enrique; Magén, C.; Estradé, S. y Peiró, F. (2011). Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy. En: "2nd Joint Congress Of The Portuguese And Spanish Microscopy Societies", 18/10/2011 - 21/10/2012, Aveiro, Portugal. pp. 1-3.

Gacevic, Zarko; Fernández-Garrido, Sergio; Calleja Pardo, Enrique; Hosseini, D.; Estradé, S. y Peiró, F. (2011). Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy. En: "16th European Molecular Beam Epitaxy Workshop, Euro MEB 2011", 20/03/2011 - 23/03/2011, AlpesFranceses, Francia.

Lefebvre, P.; Albert, Steven; Ristic, Jelena; Fernández-Garrido, Sergio; Grandal Quintana, Javier; Sánchez García, Miguel Angel y Calleja Pardo, Enrique (2011). Surface-related optical properties of GaN and InGaN nanocolumns. En: "E-MRS Srping Meeting", 10/05/2011 - 12/05/2011, Niza, Francia.

Redondo-Cubero, Andrés; Lorenz, K.; Franco, N.; Fernández-Garrido, Sergio; Gago, R.; Smulders, P.J.M.; Muñoz Merino, Elias; Calleja Pardo, Enrique y Alves, E. (2010). Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channellin. En: "51st Workshop of the INFN Eloisatron Project", 25/10/2008-01/11/2008, Erice, Italia. ISBN 978-981-4307-00-0.

Edwards, P.R.; Martin, R.W; Bejtka, K.; O´Donnell, K.P.; Fernández-Garrido, Sergio y Calleja Pardo, Enrique (2009). Correlating Composition and Luminescence Variations in AlInGaN epilayers. En: "9th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, BIAMS 2008", 29/06/2008-03/07/2008, Toledo, España. ISBN 0749-6036. https://doi.org/10.1016/j.spmi.2008.10.014.

Tesis

Fernández-Garrido, Sergio (2009). Crecimiento de nitruros del grupo III por epitaxia de haces moleculares para la fabricación de diodos electroluminiscentes en el rango visible-ultravioleta. Tesis (Doctoral), E.T.S.I. Telecomunicación (UPM).

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