Items where author is "Gacevic, Zarko"

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Article

Utrilla Lomas, Antonio David and Ulloa Herrero, José María and Gacevic, Zarko and Reyes, D.F. and Artacho Huertas, Irene and Ben, T. and González, D. and Hierro Cano, Adrián and Guzmán Fernández-González, Álvaro de (2016). Impact of alloyed capping layers on the performance of In As quantum dot solar cells. "Solar Energy Materials And Solar Cells", v. 144 ; pp. 128-135. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2015.08.009.

Utrilla Lomas, Antonio David and Reyes, D.F. and Llorens Molina, Juan Antonio and Artacho Huertas, Irene and Ben, T. and González Lamuño, D. and Gacevic, Zarko and Kurtz de Griñó, Alejandro and Guzmán, Luis Alberto and Hierro Cano, Adrián and Ulloa Herrero, José María (2016). Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells. "Solar Energy Materials and Solar Cells", v. 159 ; pp. 282-289. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2016.09.006.

Gacevic, Zarko and Bengoechea Encabo, Ana and Albert, Steven and Torres Pardo, Almudena and González Calbet, José María and Calleja Pardo, Enrique (2015). Crystallographically uniform arrays of ordered (In)GaN Nanocolumns. "Journal of Applied Physics", v. 117 (n. 3); pp.. ISSN 0022-0248. https://doi.org/10.1063/1.4905951.

Gacevic, Zarko and Gómez Hernández, Víctor Jesús and García Lepetit, Noemí and Soto Rodríguez, Paul and Bengoechea Encabo, Ana and Fernández Garrido, Sergio and Nötzel, R. and Calleja Pardo, Enrique (2013). A comprehensive diagram to grow metal-polarity InGaN alloys by molecular beam epitaxy. "Journal of Crystal Growth", v. 364 ; pp. 123-127. ISSN 0003-6951. https://doi.org/10.1016/j.jcrysgro.2012.11.031.

Eljarrat, A. and Estradé, S. and Gacevic, Zarko and Fernández-Garrido, Sergio and Calleja Pardo, Enrique and Magén, C. and Peiró, F. (2012). Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence. "Microscopy and Microanalysis", v. 18 ; pp. 1143-1154. ISSN 1431-9276. https://doi.org/10.1017/S1431927612001328.

Gacevic, Zarko and Fernández-Garrido, Sergio and Rebled, J.M. and Estradé, S. and Peiró, F. and Calleja Pardo, Enrique (2011). High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy. "Applied Physics Letters", v. 99 (n. 3); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.3614434.

Gacevic, Zarko and Das, A. and Teubert, J. and Kotsar, Y. and Kandaswamy, P. K. and Kehagias, Th. and Koukoula, T. and Komninou, Ph. and Monroy, E. (2011). Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy. "Journal of Applied Physics", v. 109 (n. 10); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.3590151.

Gacevic, Zarko and Fernández-Garrido, Sergio and Calleja Pardo, Enrique and Luna García de la Infanta, Esperanza and Trampert, Achim (2009). Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy. "Physica Status Solidi B-Basic Solid State Physics", v. 6 (n. 6-S2); pp.. ISSN 0370-1972. https://doi.org/10.1002/pssc.200880833.

Fernández-Garrido, Sergio and Gacevic, Zarko and Calleja Pardo, Enrique (2008). A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy. "Applied Physics Letters", v. 93 (n. 19); pp. 191907-1. ISSN 0003-6951. https://doi.org/10.1063/1.3026541.

Presentation at Congress or Conference

Aseev, Pavel and Gacevic, Zarko and Calleja Pardo, Enrique and Seger, Brian and Vesborg, Peter C. K. and Chorkendorff, Ib (2016). Photoelectrochemical properties of full composition InxGa1-xN/Si photoanodes. In: "21st International Conference on Photochemical Conversion and Storage of Solar Energy (IPS-21)", 25/07/2016 - 29/07/2016, St. Petersburg, Russia. p. 161.

Utrilla Lomas, Antonio David and Reyes, D.F. and Llorens, J.M. and Gonzalo Martin, Alicia and Artacho Huertas, Irene and Ben, T. and Gonzalez, D. and Gacevic, Zarko and Guzmán, A. and Hierro Cano, Adrian and Ulloa Herrero, Jose Maria (2016). Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells. In: "32nd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2016)", 20/06/2016 - 24/06/2016, Munich (Germany). pp. 32-35.

Utrilla Lomas, Antonio David and Ulloa Herrero, José María and Gacevic, Zarko and Reyes, D.F. and González, D. and Ben, T. and Fernández González, Alvaro de Guzmán and Hierro Cano, Adrián (2015). GaAs(Sb)(N)-caped InAs/GaAs Quantum Dots for enhanced solar cell efficiency. In: "18th European Molecular Beam Epitaxy (EUROMBE 2015)", 15/03/2015 - 18/03/2015, Canazei, Italy. pp..

Utrilla Lomas, Antonio David and Ulloa Herrero, José María and Gacevic, Zarko and Fernández González, Alvaro de Guzmán and Hierro Cano, Adrián (2014). Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency. In: "Workshop on Nanostructures for Solar Cells", 02/10/2014 - 03/10/2014, Braga , Portugal. p. 1.

Utrilla Lomas, Antonio David and Ulloa Herrero, José María and Gacevic, Zarko and Fernández González, Alvaro de Guzmán and Hierro Cano, Adrián (2014). Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency. In: "18th International Conference on Molecular Beam Epitaxy (MBE 2014)", 07/09/2014 - 12/09/2014, Flagstaff, Arizona, EE.UU. pp. 10-15.

Gómez Hernández, Víctor Jesús and Gacevic, Zarko and Aseev, Pavel and Soto Rodríguez, Paul and Kumar, Praveen and Calleja Pardo, Enrique and Nötzel, Richard and Sánchez García, Miguel Ángel (2014). XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire. In: "International Workshop on Nitride Semiconductors (IWN2014)", 24/08/2014 - 29/08/2014, Wroclaw, Poland. p. 1.

Brazzini, Tommaso and Tadjer, Marko Jak and Gacevic, Zarko and Pandey, Saurabh and Cavallini, Anna and Behmenburg, H. and Giesen, C. and Heuken, M. and Calle Gómez, Fernando (2012). Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures. In: "International Workshop on Nitride Semiconductors (IWN2012)", 14/10/2012 - 19/10/2012, Sapporo, Japan. pp. 1-3.

Gacevic, Zarko and Lefebvre, P. and Calleja Pardo, Enrique and Bertram, F. and Schmidt, G. and Veit, P. and Christen, J. (2011). Growth and characterization of InGaN/GaN quantum dots for violet/blue applications. In: "International Conference on Nitride Semiconductors 2011", 10/07/2011 - 15/07/2011, Glasgow, UK. pp. 1-3.

Brazzini, Tommaso and Albert, Steven and Das, A. and Gacevic, Zarko and Monroy, E. and Sánchez García, Miguel Angel and Calle Gómez, Fernando (2011). InN/GaN heterojunction electrical behavior. In: "9th International Conference on Nitride Semiconductors", 10/07/2011 - 15/07/2011, Glasgow, UK. pp..

Eljarrat, A. and Gacevic, Zarko and Fernández-Garrido, Sergio and Calleja Pardo, Enrique and Magén, C. and Estradé, S. and Peiró, F. (2011). Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy. In: "2nd Joint Congress Of The Portuguese And Spanish Microscopy Societies", 18/10/2011 - 21/10/2012, Aveiro, Portugal. pp. 1-3.

Gacevic, Zarko and Fernández-Garrido, Sergio and Calleja Pardo, Enrique and Hosseini, D. and Estradé, S. and Peiró, F. (2011). Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy. In: "16th European Molecular Beam Epitaxy Workshop, Euro MEB 2011", 20/03/2011 - 23/03/2011, AlpesFranceses, Francia.

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