Items where author is "Gago, R."

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Number of items: 4.

Article

Redondo-Cubero, Andrés and Gago, R. and González-Posada Flores, Fernando and Kreissig, U. and Di Forte Poisson, M-A. and Braña, A.F. and Muñoz Merino, Elias (2008). Aluminium incorporation in AlGaN/GaN heterostructures: a comparative study by ion beam analysis and X-ray diffraction. "Thin Solid Films", v. 516 (n. 23); pp. 8447-8452. ISSN 0040-6090. https://doi.org/10.1016/j.tsf.2008.04.069.

Fernández-Garrido, Sergio and Redondo-Cubero, Andrés and Gago, R. and Bertram, F. and Christen, J. and Luna García de la Infanta, Esperanza and Trampert, Achim and Pereiro Viterbo, Juan and Muñoz Merino, Elias and Calleja Pardo, Enrique (2008). Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy. "Journal of Applied Physics", v. 104 (n. 8); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.2999564.

Fernández-Garrido, Sergio and Pereiro Viterbo, Juan and González-Posada Flores, Fernando and Muñoz Merino, Elias and Calleja Pardo, Enrique and Redondo-Cubero, Andrés and Gago, R. (2008). Photoluminiscence enhancement in quaternay III-nitrides alloys grown by molecular beam epitaxy with increasing Al content. "Journal of Applied Physics", v. 103 (n. 4); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.2874451.

Presentation at Congress or Conference

Redondo-Cubero, Andrés and Lorenz, K. and Franco, N. and Fernández-Garrido, Sergio and Gago, R. and Smulders, P.J.M. and Muñoz Merino, Elias and Calleja Pardo, Enrique and Alves, E. (2010). Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channellin. In: "51st Workshop of the INFN Eloisatron Project", 25/10/2008-01/11/2008, Erice, Italia. ISBN 978-981-4307-00-0.

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