Number of items: 4.
Article
Ulloa Herrero, José María and Koenraad, P.M. and Hopkinson, M. (2008) Structural properties of GaAsN/GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunnelling microscopy. Applied Physics Letters, 93 (8). 083103-1 . ISSN 0003-6951
Presentation at Congress or Day
Gargallo Caballero, Raquel and Fernández González, Alvaro de Guzmán and Ulloa Herrero, José María and Hopkinson, M. and Muñoz Merino, Elias (2009) The influence of Ga composition of GaInAsN QDs on N incorporation. In: 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces, 21/04/2008-24/04/2008, Marsella, Francia.
Haxha, V. and Garg, R. and Migliorato, M.A and Drouzas, I.W and Ulloa Herrero, José María and Koenraad, P.M. and Steer, M.J and Liu, H.Y and Hopkinson, M. and Mowbray, D.J (2008) The use of Abel-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs. In: 8th International Conference on Numerical Simulation of Optoelectronic Devices Nottingham (UK), 2008, 01/09/2008-05/09/2008, Nottingham, UK.
Migliorato, M.A and Haxha, V. and Garg, R. and Drouzas, I.W and Ulloa Herrero, José María and Koenraad, P.M. and Steer, M.J and Liu, H.Y and Hopkinson, M. and Mowbray, D.J (2008) Atomistic Modelling of III-V Semiconductors: from a single tetrahedron to millions of atoms. In: 17th European Heterostructure Technology Workshop (Hetech 2008), 02/11/2008-05/11/2008, Venecia, Italia.
This list was generated on Sat May 26 15:30:01 2012 CEST.