Items where author is "Reyes, D.F."

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Article

Utrilla Lomas, Antonio David and Ulloa Herrero, José María and Gacevic, Zarko and Reyes, D.F. and Artacho Huertas, Irene and Ben, T. and González, D. and Hierro Cano, Adrián and Guzmán Fernández-González, Álvaro de (2016). Impact of alloyed capping layers on the performance of In As quantum dot solar cells. "Solar Energy Materials And Solar Cells", v. 144 ; pp. 128-135. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2015.08.009.

Utrilla Lomas, Antonio David and Reyes, D.F. and Llorens Molina, Juan Antonio and Artacho Huertas, Irene and Ben, T. and González Lamuño, D. and Gacevic, Zarko and Kurtz de Griñó, Alejandro and Guzmán, Luis Alberto and Hierro Cano, Adrián and Ulloa Herrero, José María (2016). Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells. "Solar Energy Materials and Solar Cells", v. 159 ; pp. 282-289. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2016.09.006.

Reyes, D.F. and Ulloa Herrero, José María and Fernández González, Alvaro de Guzmán and Hierro Cano, Adrián and Sales, D.L. and Beanland, R. and Sánchez, A.M. and González, D. (2015). Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots. "Semiconductor Science and Technology", v. 30 (n. 11); pp. 1-9. ISSN 0268-1242. https://doi.org/10.1088/0268-1242/30/11/114006.

Ulloa Herrero, José María and Llorens, J.M. and Alén Millán, Benito and Reyes, D.F. and Sales, D.L. and Gonzalez, D. and Hierro Cano, Adrián (2012). High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing. "Applied Physics Letters", v. 101 (n. 25); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4773008.

Presentation at Congress or Conference

Utrilla Lomas, Antonio David and Reyes, D.F. and Llorens, J.M. and Gonzalo Martin, Alicia and Artacho Huertas, Irene and Ben, T. and Gonzalez, D. and Gacevic, Zarko and Guzmán, A. and Hierro Cano, Adrian and Ulloa Herrero, Jose Maria (2016). Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells. In: "32nd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2016)", 20/06/2016 - 24/06/2016, Munich (Germany). pp. 32-35.

Utrilla Lomas, Antonio David and Ulloa Herrero, José María and Gacevic, Zarko and Reyes, D.F. and González, D. and Ben, T. and Fernández González, Alvaro de Guzmán and Hierro Cano, Adrián (2015). GaAs(Sb)(N)-caped InAs/GaAs Quantum Dots for enhanced solar cell efficiency. In: "18th European Molecular Beam Epitaxy (EUROMBE 2015)", 15/03/2015 - 18/03/2015, Canazei, Italy. pp..

Reyes, D.F. and Sales, D.L. and Gargallo Caballero, Raquel and Ulloa Herrero, José María and Hierro Cano, Adrián and Fernández González, Alvaro de Guzmán and Garcia, R. and Gonzalez, D. (2011). Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots. In: "17th International Conference on Microscopy of Semiconducting Materials 2011", 04/04/2011 - 07/04/2011, Cambridge, UK. pp..

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