Items where author is "Romero Rojo, Fátima"

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Number of items: 12.

Article

Bokov, P. Yu and Brazzini, Tommaso and Romero Rojo, Fátima and Calle Gómez, Fernando and Feneberg, Martin and Goldhahn, R. (2015). Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures. "Semiconductor Science and Technology", v. 30 (n. 8); pp. 1-6. ISSN 0268-1242. https://doi.org/10.1088/0268-1242/30/8/085014.

Martin Horcajo, Sara and Wang, Ashu and Bosca Mojena, Alberto and Romero Rojo, Fátima and Tadjer, Marko Jak and Koehler, Andrew D. and Anderson, Travis J. and Calle Gómez, Fernando (2015). Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries. "Semiconductor Science and Technology", v. 30 (n. 3); pp. 1-10. ISSN 0268-1242. https://doi.org/10.1088/0268-1242/30/3/035015.

Romero Rojo, Fátima and Feneberg, Martin and Moser, Pascal and Berger, Christoph and Bläsing, Jürgen and Dadgar, Armin and Krost, Alois and Sakalauskas, Egidijus and Goldhahn, Rüdige (2012). Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content. "Applied Physics Letters", v. 100 (n. 21); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4720087.

Romero Rojo, Fátima and Jiménez Martín, Ana and González Posadas, Vicente and Martin Horcajo, Sara and Calle Gómez, Fernando and Muñoz Merino, Elias (2012). Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance. "IEEE Transactions on Electron Devices", v. 59 (n. 2); pp. 374-379. ISSN 0018-9383. https://doi.org/10.1109/TED.2011.2176947.

Romero Rojo, Fátima and Jiménez, A. and Sánchez, José M. and Braña, A.F. and González-Posada Flores, Fernando and Cuerdo Bragado, Roberto and Calle Gómez, Fernando and Muñoz Merino, Elias (2008). Effects of N2 Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT. "IEEE Electron Device Letters", v. 29 (n. 3); pp. 209-211. ISSN 0741-3106. https://doi.org/10.1109/LED.2008.915568.

Presentation at Congress or Conference

Cucak, Dejana and Vasic, Miroslav and García, Oscar and Bouvier, Yann and Oliver Ramírez, Jesús Angel and Alou Cervera, Pedro and Cobos Márquez, José Antonio and Wang, Ashu and Martin Horcajo, Sara and Romero Rojo, Fátima and Calle Gómez, Fernando (2014). Physical model for GaN HEMT design optimization in high frequency switching applications. In: "44th European Solid State Device Research Conference (ESSDERC 2014)", 22/09/2014 - 26/09/2014, Venice, Italy. pp. 393-396. https://doi.org/10.1109/ESSDERC.2014.6948843.

Cucak, Dejana and Vasic, Miroslav and García, Oscar and Bouvier, Yann and Oliver Ramírez, Jesús Angel and Alou Cervera, Pedro and Cobos Márquez, José Antonio and Wang, Ashu and Martin Horcajo, Sara and Romero Rojo, Fátima and Calle Gómez, Fernando (2014). Physical modeling and optimization of a GaN HEMT design with a field plate structure for high frequency application. In: "IEEE Energy Conversion Congress and Exposition (ECCE 2014)", 14/09/2014 - 18/09/2014, Pittsburgh,Pennsylvania, USA. pp. 2857-2864. https://doi.org/10.1109/ECCE.2014.6953786.

Gao Zhan, Verónica and Romero Rojo, Fátima and Pampillón Arce, María Ángela and San Andrés Serrano, Enrique and Calle Gómez, Fernando (2014). Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric. In: "23th European Workshop on Heterostructures Technology (HETECH 2014)", 12/10/201 - 15/10/2014, Giessen, Germany. pp. 1-2.

Martin Horcajo, Sara and Tadjer, Marko Jak and Romero Rojo, Fátima and Cuerdo Bragado, Roberto and Calle Gómez, Fernando (2011). Fabrication and characterization at high temperature of AlGaN/GaN enhancement HEMTs. In: "8th Spanish Conference on Electron Devices, CDE'2011", 08/02/2011 - 11/02/2011, Palma de Mallorca, España. ISBN 978-1-4244-7863-7. pp..

Romero Rojo, Fátima and Jiménez, A. and González-Posada Flores, Francisco and Martin Horcajo, Sara and Calle Gómez, Fernando and Muñoz Merino, Elias (2011). Impact of N2 plasma power and duration on AlGaN/GaN HEMT. In: "9th International Conference on Nitride Semiconductors", 10/07/2011 - 15/07/2011, Glasgow, UK. pp..

Romero Rojo, Fátima and Uren, M. and Jiménez, A. and Dua, C. and Tadjer, Marko Jak and Cuerdo Bragado, Roberto and Calle Gómez, Fernando and Muñoz Merino, Elias (2011). Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT's reliability. In: "9th International Conference on Nitride Semiconductors", 10/07/2011 - 15/07/2011, Glasgow, UK. pp..

Cuerdo Bragado, Roberto and Sillero Herrero, Eugenio and Romero Rojo, Fátima and Uren, M. and Muñoz Merino, Elias and Calle Gómez, Fernando (2008). DC and RF Performance of AlGaN/GaN HEMTs on SiC at High Temperatures. In: "The 5th International Workshop on Nitride semiconductors (IWN2008)", 06/10/2008-10/10/2008, Montreaux (Suiza). pp..

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