Items where author is "Soto Rodríguez, Paul"

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Number of items: 5.

Article

Soto Rodríguez, Paul and Maria Mari, Claudio and Sanguinetti, Stefano and Ruffo, Riccardo and Nötzel, Richard (2016). Epitaxial InN/InGaN quantum dots on Si: Cl- anion selectivity and pseudocapacitor behavior. "Applied Physics Express", v. 9 (n. 8); pp.. ISSN 0003-6951. https://doi.org/10.7567/APEX.9.081004.

Soto Rodríguez, Paul and Aseev, Pavel and Gómez Hernández, Víctor Jesús and Ul Hassan Alvi, Naveed and Calleja Pardo, Enrique and Manuel, José M. and Morales Sánchez, Francisco Miguel and Kumar, Praveen and Jiménez, Juan J. and García, Rafael and Senichev, Alexander and Lienau, Christoph and Nötzel, Richard (2015). Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111). "Applied Physics Letters", v. 106 (n. 2); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4905662.

Gacevic, Zarko and Gómez Hernández, Víctor Jesús and García Lepetit, Noemí and Soto Rodríguez, Paul and Bengoechea Encabo, Ana and Fernández Garrido, Sergio and Nötzel, R. and Calleja Pardo, Enrique (2013). A comprehensive diagram to grow metal-polarity InGaN alloys by molecular beam epitaxy. "Journal of Crystal Growth", v. 364 ; pp. 123-127. ISSN 0003-6951. https://doi.org/10.1016/j.jcrysgro.2012.11.031.

Alvi, Naveed ul Hassan and Soto Rodríguez, Paul and Gómez Hernández, Víctor Jesús and Kumar, Praveen and Amin, G. and Nur, O. and Willander, Magnus and Nötzel, R. (2012). Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots. "Applied Physics Letters", v. 101 (n. 15); p. 153110. ISSN 0003-6951. https://doi.org/10.1063/1.4758701.

Presentation at Congress or Conference

Gómez Hernández, Víctor Jesús and Gacevic, Zarko and Aseev, Pavel and Soto Rodríguez, Paul and Kumar, Praveen and Calleja Pardo, Enrique and Nötzel, Richard and Sánchez García, Miguel Ángel (2014). XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire. In: "International Workshop on Nitride Semiconductors (IWN2014)", 24/08/2014 - 29/08/2014, Wroclaw, Poland. p. 1.

  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM