Items where Author is "Tadjer, Marko Jak"

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Number of items: 12.

Article

Martin Horcajo, Sara and Wang, Ashu and Bosca Mojena, Alberto and Romero Rojo, Fátima and Tadjer, Marko Jak and Koehler, Andrew D. and Anderson, Travis J. and Calle Gómez, Fernando (2015). Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries. "Semiconductor Science and Technology", v. 30 (n. 3); pp. 1-10. ISSN 0268-1242. https://doi.org/10.1088/0268-1242/30/3/035015.

Anderson, Travis J. and Hobart, Karl D. and Nyakiti, Luke O. and Wheeler, Virginia D. and Myers-Ward, Rachael L. and Caldwell, Joshua D. and Bezares, Francisco J. and Jernigan, Glenn Geoffrey and Tadjer, Marko Jak and Imhoff, Eugene A. and Koehler, Andrew D. and Gaskill, D. Kurt and Eddy Jr., Charles R. and Kub, Francis J. (2012). Investigation of the Epitaxial Graphene/p-SiC Heterojunction. "Ieee Electron Device Letters", v. 33 (n. 11); pp. 1610-1612. ISSN 0741-3106. https://doi.org/10.1109/LED.2012.2211562.

Tadjer, Marko Jak and Anderson, Travis J. and Hobart, Karl D. and Nyakiti, Luke O. and Wheeler, Virginia D. and Myers-Ward, Rachael L. and Gaskill, D. Kurt and Eddy Jr., Charles R. and Kub, Francis J. and Calle Gómez, Fernando (2012). Vertical conduction properties of few-layer epitaxial graphene / n-type 4H-SiC heterojunctions at cryogenic temperatures. "Applied Physics Letters" (n. 100); pp. 193506-193509. ISSN 0003-6951. https://doi.org/10.1063/1.4712621.

Currie, Marc and Caldwell, Joshua D. and Bezares, Francisco J. and Robinson, Jeremy and Anderson, Travis J. and Chun, Hayden and Tadjer, Marko Jak (2011). Quantifying pulsed laser induced damage to grapheme. "Applied Physics Letters", v. 99 (n. 21); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.3663875.

Tadjer, Marko Jak and Martin Horcajo, Sara and Calle Gómez, Fernando and Anderson, Travis J. and Cuerdo Bragado, Roberto and Hobart, Karl D. (2011). Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors. "Physica status solidi c" ; pp. 1-3. ISSN 1862-6351. https://doi.org/10.1002/pssc.201001102.

Presentation at Congress or Conference

Cucak, Dejana and Vasic, Miroslav and García Suárez, Oscar and Oliver Ramírez, Jesús Angel and Alou Cervera, Pedro and Cobos Márquez, José Antonio and Tadjer, Marko Jak and Calle Gómez, Fernando and Benkhelifa, F. and Reiner, R. and Waltereit, P. and Müller, S. (2013). Application and modeling of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier. In: "Seminario Anual de Automática, Electrónica Industrial e Instrumentación 2013 (SAAEI'13)", 10/07/2013 - 12/07/2013, Madrid, Spain. p. 5.

Anderson, Travis J. and Tadjer, Marko Jak and Hobart, Karl D. and Feygelson, Tatyana I. and Caldwell, Joshua D. and Mastro, Michael A. and Hite, Jennifer K. and Eddy Jr., Charles R. and Kub, Francis J. and Pate, Bradford B. (2012). Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers. In: "CSManTech Conference", 23/04/2012-26-04/2012, Boston, Massachusetts, USA. pp..

Anderson, Travis J. and Hobart, Karl D. and Tadjer, Marko Jak and Feygelson, Tatyana I. and Imhoff, Eugene A. and Meyer, David J. and Katzer, D. Scott and Hite, Jennifer K. and Kub, Francis J. and Pate, Bradford B. and Binari, Steven. C. and Eddy Jr., Charles R. (2012). Improved GaN-based HEMT performance by nanocrystalline diamond capping. In: "70th Annual Device Research Conference", 18/06/2012-20/06/2012, University Park, Texas, EEUU. pp. 155-156.

Brazzini, Tommaso and Tadjer, Marko Jak and Gacevic, Zarko and Pandey, Saurabh and Cavallini, Anna and Behmenburg, H. and Giesen, C. and Heuken, M. and Calle Gómez, Fernando (2012). Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures. In: "International Workshop on Nitride Semiconductors (IWN2012)", 14/10/2012 - 19/10/2012, Sapporo, Japan. pp. 1-3.

Martin Horcajo, Sara and Tadjer, Marko Jak and Romero Rojo, Fátima and Cuerdo Bragado, Roberto and Calle Gómez, Fernando (2011). Fabrication and characterization at high temperature of AlGaN/GaN enhancement HEMTs. In: "8th Spanish Conference on Electron Devices, CDE'2011", 08/02/2011 - 11/02/2011, Palma de Mallorca, España. ISBN 978-1-4244-7863-7. pp..

Martin Horcajo, Sara and Tadjer, Marko Jak and Di Forte Poisson, M-A. and Sarazin, N. and Morvan, E. and Dua, C. and Cuerdo Bragado, Roberto and Calle Gómez, Fernando (2011). High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs. In: "9th International Conference on Nitride Semiconductors", 10/07/2012 - 15/07/2012, Glasgow (UK),. pp..

Romero Rojo, Fátima and Uren, M. and Jiménez, A. and Dua, C. and Tadjer, Marko Jak and Cuerdo Bragado, Roberto and Calle Gómez, Fernando and Muñoz Merino, Elias (2011). Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT's reliability. In: "9th International Conference on Nitride Semiconductors", 10/07/2011 - 15/07/2011, Glasgow, UK. pp..

  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM