Items where author is "Trampert, Achim"

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Article

Albert, Steven and Bengoechea Encabo, Ana and Kong, Xiang and Sánchez García, Miguel Ángel and Trampert, Achim and Calleja Pardo, Enrique (2015). Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy. "Crystal Growth & Design", v. 15 (n. 6); pp. 2661-2666. ISSN 1528-7483. https://doi.org/10.1021/cg501798j.

Niehle, M. and Trampert, Achim and Albert, Steven and Bengoechea Encabo, Ana and Calleja Pardo, Enrique (2015). Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates. "APL Materials", v. 3 (n. 3); pp.. ISSN 2166-532X. https://doi.org/10.1063/1.4914102.

Kong, Xiang and Albert, Steven and Bengoechea Encabo, Ana and Sánchez García, Miguel Angel and Calleja Pardo, Enrique and Calle Gómez, Fernando and Trampert, Achim (2015). Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate. "Physica Status Solidi A-Applications and materials science", v. 212 (n. 4); pp. 736-739. ISSN 1862-6300. https://doi.org/10.1002/pssa.201400198.

Albert, Steven and Bengoechea Encabo, Ana and Barbagini, Francesca and López Romero, David and Sánchez García, Miguel Angel and Calleja Pardo, Enrique and Lefebvre, Pierre and Kong, Xiang and Jahn, Uwe and Trampert, Achim and Müller, Marcus and Bertram, Frank and Schmidt, Gordon and Veit, Peter and Petzold, Silke and Christen, Jürgen and Mierry, Philippe de and Zuñiga Pérez, Jesús (2014). Advances on MBE selective area growth of III-nitride nanostructures: from nanoLEDs to pseudo substrates. "International Journal of High Speed Electronics and Systems", v. 23 (n. 3-4); pp.. ISSN 1793-6438. https://doi.org/10.1142/S0129156414500207.

Luna García de la Infanta, Esperanza and Fernández González, Alvaro de Guzmán and Trampert, Achim and Álvarez Galindo, Gabriel (2012). Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces. "Physical Review Letters", v. 109 ; pp. 126101-126105. ISSN 0031-9007. https://doi.org/10.1103/PhysRevLett.109.126101.

Barbagini, Francesca and Bengoechea Encabo, Ana and Albert, Steven and Lefebvre, P. and Martinez Rodrigo, Javier and Sánchez García, Miguel Angel and Trampert, Achim and Calleja Pardo, Enrique (2012). E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods. "Microelectronic Engineering", v. 98 ; pp. 374-377. ISSN 0167-9317. https://doi.org/10.1016/j.mee.2012.07.024.

Albert, Steven and Bengoechea Encabo, Ana and Lefebvre, P. and Barbagini, Francesca and Sánchez García, Miguel Angel and Calleja Pardo, Enrique and Jahn, U. and Trampert, Achim (2012). Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies. "Applied Physics Letters", v. 100 (n. 23); pp. 1-4. ISSN 0022-0248. https://doi.org/10.1063/1.4728115.

Albert, Steven and Bengoechea Encabo, Ana and Sánchez García, Miguel Angel and Barbagini, Francesca and Calleja Pardo, Enrique and Luna García de la Infanta, Esperanza and Trampert, Achim and Jahn, U. and Lefebvre, P. and López, L.L. and Estradé, S. and Rebled, J.M. and Peiró, F. and Nataf, G. and Mierry, P. de and Zuniga Perez, J. (2012). Ordered gan/ingan nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission. "International Journal of High Speed Electronics", v. 21 (n. 1); pp. 1250010-1250034. ISSN 0129-1564. https://doi.org/10.1142/S0129156412500103.

Barbagini, Francesca and Bengoechea Encabo, Ana and Albert, Steven and Martinez Rodrigo, Javier and Sánchez García, Miguel Angel and Trampert, Achim and Calleja Pardo, Enrique (2011). Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns.. "Nanoscale research letters", v. 6 (n. 1); pp. 632-641. ISSN 1556-276X. https://doi.org/10.1186/1556-276X-6-632.

Albert, Steven and Bengoechea Encabo, Ana and Lefebvre, P. and Sánchez García, Miguel Angel and Calleja Pardo, Enrique and Sánchez García, Miguel Angel and Jahn, U. and Trampert, Achim (2011). Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates. "Applied Physics Letters", v. 99 (n. 13); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.3644986.

Grandal Quintana, Javier and Pereiro Viterbo, Juan and Bengoechea Encabo, Ana and Fernández-Garrido, Sergio and Sánchez García, Miguel Angel and Muñoz Merino, Elias and Calleja Pardo, Enrique and Luna García de la Infanta, Esperanza and Trampert, Achim (2011). InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy. "Applied Physics Letters", v. 98 (n. 6); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.3552195.

Bengoechea Encabo, Ana and Barbagini, Francesca and Fernández-Garrido, Sergio and Grandal Quintana, Javier and Ristic, Jelena and Sánchez García, Miguel Angel and Calleja Pardo, Enrique and Jahn, U. and Luna García de la Infanta, Esperanza and Trampert, Achim (2011). Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks. "Journal of Crystal Growth", v. 325 (n. 1); pp. 89-92. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2011.04.035.

Gacevic, Zarko and Fernández-Garrido, Sergio and Calleja Pardo, Enrique and Luna García de la Infanta, Esperanza and Trampert, Achim (2009). Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy. "Physica Status Solidi B-Basic Solid State Physics", v. 6 (n. 6-S2); pp.. ISSN 0370-1972. https://doi.org/10.1002/pssc.200880833.

Ishikawa, Fumitario and Fernández González, Alvaro de Guzmán and Brandt, Oliver and Trampert, Achim and Ploog, K.H. (2008). Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells. "Journal of Applied Physics", v. 104 (n. 11); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.3031652.

Fernández-Garrido, Sergio and Redondo-Cubero, Andrés and Gago, R. and Bertram, F. and Christen, J. and Luna García de la Infanta, Esperanza and Trampert, Achim and Pereiro Viterbo, Juan and Muñoz Merino, Elias and Calleja Pardo, Enrique (2008). Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy. "Journal of Applied Physics", v. 104 (n. 8); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.2999564.

Ristic, Jelena and Calleja Pardo, Enrique and Fernández-Garrido, Sergio and Trampert, Achim and Cerutti, Laurent and Jahn, U. and Ploog, K.H. (2008). On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy. "Journal of Crystal Growth", v. 310 (n. 18); pp. 4035-4045. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2008.05.057.

Jahn, U. and Calleja Pardo, Enrique and Ristic, Jelena and Trampert, Achim and Rivera de Lucas, Carlos (2008). Spatially Resolved Luminescence Spectroscopy of Single GaN/(Al,Ga)N Quantum Disks. "physica status solidi C", v. 5 (n. 6); pp. 2164-2166. ISSN 0370-1972. https://doi.org/10.1002/pssc.200778508.

Luna García de la Infanta, Esperanza and Trampert, Achim and Miguel-Sanchez, J. and Fernández González, Alvaro de Guzmán and Ploog, K.H. (2008). Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (1 1 1) B GaAs. "Journal of Physics and Chemistry of Solids", v. 69 (n. 2-3); pp. 343-346. ISSN 0022-3697. https://doi.org/10.1016/j.jpcs.2007.07.063.

Presentation at Congress or Conference

Sánchez García, Miguel Ángel and Albert, Steven and Bengoechea Encabo, Ana and Calleja Pardo, Enrique and Trampert, Achim and Zuniga Perez, J. (2015). Morphology and optical properties of ordered GaN and InGaN nanocolumns grown on non-polar and semipolar orientations. In: "2015 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic materials and Devices", 11/07/2015 - 14/07/215, Kyoto, Japan.

Albert, S. and Bengoechea Encabo, Ana and López Romero, David and Mierry, Philippe de and Zuñiga Pérez, Jesús and Kong, Xiang and Trampert, Achim and Sánchez García, Miguel Ángel and Calleja Pardo, Enrique (2015). Selective Area Growth of III- Nitride Nanorods on polar, semi-polar and non-polar orientations: Device applications. In: "Quantum Sensing and Nanophotonic Devices XII", 08/02/2015 - 12/02/2015, San Francisco, California, USA. pp.. https://doi.org/10.1117/12.2085079.

Sánchez García, Miguel Angel and Albert, Steven and Bengoechea Encabo, Ana and Calleja Pardo, Enrique and Trampert, Achim and Jahn, U. and López, L.L. and Estradé, S. and Rebled, J.M. and Peiró, F. and Nataf, G. and Mierry, P. de and Zuniga Perez, J. (2012). Influence of substrate type and orientation on the morphology and optical properties of selective area growth of GaN and InGaN nanocolumns. In: "2012 German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices,", 21/07/2012 - 22/07/2012, Berlin, Germany.

Bengoechea Encabo, Ana and Albert, Steven and Barbagini, Francesca and Lefebvre, P. and Sánchez García, Miguel Angel and Calleja Pardo, Enrique and Luna García de la Infanta, Esperanza and Trampert, Achim (2011). Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted. In: "9th International Conference on Nitride Semiconductors - ICNS9", 10/07/2011 - 15/07/2011, Glasgow, UK. pp..

Calleja Pardo, Enrique and Bengoechea Encabo, Ana and Albert, Steven and Sánchez García, Miguel Angel and Barbagini, Francesca and Luna, E. and Trampert, Achim and Jahn, U. and Lefebvre, P. (2011). Efficient phosphor-free, white light emission from ordered arrays of GaN/InGaN nanocolumnar LEDs grown by Selective Area MBE. In: "Workshop On Frontiers in Electronics 2011. WOFE-2011", 18/11/2011 - 21/11/2011, San Juan, Puerto Rico. pp..

Calleja Pardo, Enrique and Bengoechea Encabo, Ana and Albert, Steven and Sánchez García, Miguel Angel and Barbagini, Francesca and Luna, E. and Trampert, Achim and Jahn, U. and Lefebvre, F. (2011). Understanding the Selective Area Nucleation and Growth of GaN nanocolumns by MBE using Ti nanomasks. In: "2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices", 16/03/2011 - 18/03/2011, Granada, España.

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