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The Diffusion Process of Metastable Carrieres in Bismuth
Citation
González de Sande, Juan Carlos 
ORCID: https://orcid.org/0000-0002-5641-5032, Sanchez Balmaseda, Margarita and Guerra Perez, Jose Manuel
(1995).
The Diffusion Process of Metastable Carrieres in Bismuth.
"Journal of Applied Physics", v. 77
(n. 12);
pp. 6358-6360.
ISSN 0021-8979.
https://doi.org/10.1063/1.359107.
Description
| Title: | The Diffusion Process of Metastable Carrieres in Bismuth |
|---|---|
| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Journal of Applied Physics |
| Date: | June 1995 |
| ISSN: | 0021-8979 |
| Volume: | 77 |
| Subjects: | |
| Faculty: | E.U.I.T. Telecomunicación (UPM) |
| Department: | Ingeniería de Circuitos y Sistemas [hasta 2014] |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
The diffusion process of electrons and holes which have been pumped into a metastable band in bismuth films by a 1.064‐μm laser pulse is considered in the calculation of the induced thermal gradient. The fit between the temporal evolution of this calculated thermal gradient and that of the thermoelectric response of films to the laser excitation allows us to estimate an upper limit of the ambipolar diffusion coefficient of metastable carriers
More information
| Item ID: | 10124 |
|---|---|
| DC Identifier: | https://oa.upm.es/10124/ |
| OAI Identifier: | oai:oa.upm.es:10124 |
| DOI: | 10.1063/1.359107 |
| Official URL: | http://jap.aip.org/resource/1/japiau/v77/i12/p6358... |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 23 Jan 2012 12:00 |
| Last Modified: | 20 Apr 2016 18:22 |
