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Energy Dependence of the Nernst-Ettingshausen Effect Induced By Pulsed Laser Light in Bismuth Films
Citation
Sanchez Balmaseda, Margarita, González de Sande, Juan Carlos 
ORCID: https://orcid.org/0000-0002-5641-5032 and Guerra Perez, Jose Manuel
(1994).
Energy Dependence of the Nernst-Ettingshausen Effect Induced By Pulsed Laser Light in Bismuth Films.
"Physical review B", v. 50
(n. 19);
pp. 14561-14564.
ISSN 0031-899X.
https://doi.org/10.1103/PhysRevB.50.14561.
Description
| Title: | Energy Dependence of the Nernst-Ettingshausen Effect Induced By Pulsed Laser Light in Bismuth Films |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Physical review B |
| Date: | November 1994 |
| ISSN: | 0031-899X |
| Volume: | 50 |
| Subjects: | |
| Faculty: | E.U.I.T. Telecomunicación (UPM) |
| Department: | Ingeniería de Circuitos y Sistemas [hasta 2014] |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
The behavior with the irradiation energy and with the magnetic field of the thermomagnetic response induced by laser pulses in 5.5-μm Bi films at room temperature is reported in this paper. The Nernst-Ettingshausen coefficient at an applied magnetic field of 1 T is estimated: QNE≃1.0×10-5 V/T K. A good agreement is found when these results are compared with those reported earlier in polycrystalline bulk samples obtained by a conventional method. This supports the reliability of the pulsed laser technique in the measurement of weak transport effects and indicates that the optically pumped carriers hardly influence the transport properties of bismuth.
More information
| Item ID: | 10125 |
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| DC Identifier: | https://oa.upm.es/10125/ |
| OAI Identifier: | oai:oa.upm.es:10125 |
| DOI: | 10.1103/PhysRevB.50.14561 |
| Official URL: | http://prb.aps.org/abstract/PRB/v50/i19/p14561_1 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 23 Jan 2012 11:33 |
| Last Modified: | 20 Apr 2016 18:22 |
