Citation
Luque López, Antonio and Martí Vega, Antonio and Antolín Fernández, Elisa and García-Linares Fontes, Pablo and Tobías Galicia, Ignacio and Ramiro Gonzalez, Iñigo
(2011).
Radiative thermal escape in intermediate band solar cells.
"AIP Advances", v. 1
(n. 2);
pp. 1-6.
ISSN 2158-3226.
https://doi.org/10.1063/1.3597326.
Abstract
To achieve high efficiency, the intermediate band (IB) solar cell must generate photocurrent from sub-bandgap photons at a voltage higher than that of a single contributing sub-bandgap photon. To achieve the latter, it is necessary that the IB levels be properly isolated from the valence and conduction bands. We prove that this is not the case for IB cells formed with the confined levels of InAs quantum dots (QDs) in GaAs grown so far due to the strong density of internal thermal photons at the transition energies involved. To counteract this, the QD must be smaller.
