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Gonzalez Arrabal, Raquel and Redondo-Cubero, Andrés and González, Y. and González, L. and Martin Gonzalez, Mercedes (2011). Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films. "Nuclear Instruments and Methods in Physics Research B", v. 269 (n. 8); pp. 733-738. ISSN 0167-5087. https://doi.org/10.1016/j.nimb.2011.02.004.
Title: | Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Nuclear Instruments and Methods in Physics Research B |
Date: | April 2011 |
ISSN: | 0167-5087 |
Volume: | 269 |
Subjects: | |
Faculty: | E.T.S.I. Industriales (UPM) |
Department: | Ingeniería Nuclear [hasta 2014] |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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The lattice order degree and the strain in as-grown, Mn-implanted and post-implantedannealedInAsthinfilms were investigated with depth resolution by means of Rutherford backscattering spectrometry in channeling conditions (RBS/C). Three main crystallographic axes were analyzed for both In and As sublattices. The behaviour of the induced defects was evaluated in two regions with different native defects: the interface and the surface. The results show that Mn implantation and post-implantation annealing are anisotropic processes, affecting in a different way the In and As sublattices. The mechanisms influencing the enhancement and deterioration of the crystal quality during the implantation are discussed in relation to the as-grown defects and the segregation of the elements
Item ID: | 11460 |
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DC Identifier: | https://oa.upm.es/11460/ |
OAI Identifier: | oai:oa.upm.es:11460 |
DOI: | 10.1016/j.nimb.2011.02.004 |
Deposited by: | Memoria Investigacion |
Deposited on: | 23 Jul 2012 11:57 |
Last Modified: | 20 Apr 2016 19:32 |