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Garcia Tabares Valdivieso, Elisa and García Vara, Iván and Martín Martín, Diego and Rey-Stolle Prado, Ignacio (2011). Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells. In: "37th IEEE PV Specialist Conference", 19/06/2011 - 24/06/2011, Seattle, EEUU. ISBN 978-1-4244-9966-3. pp. 784-789.
Title: | Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells |
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Author/s: |
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Item Type: | Presentation at Congress or Conference (Article) |
Event Title: | 37th IEEE PV Specialist Conference |
Event Dates: | 19/06/2011 - 24/06/2011 |
Event Location: | Seattle, EEUU |
Title of Book: | Proceedings of 37th IEEE PV Specialist Conference |
Date: | 2011 |
ISBN: | 978-1-4244-9966-3 |
Subjects: | |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Electrónica Física |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. Such integration would offer a cost breakthrough for photovoltaic technology, unifying the low cost of silicon and the efficiency potential of III-V multijunction solar cells. In this study, we analyze several factors influencing the performance of the bottom subcell of this dual-junction, namely, 1) the formation of the emitter as a result of the phosphorus diffusion that takes place during the prenucleation temperature ramp and during the growth of the III-V layers; 2) the degradation in surface morphology during diffusion; and 3) the quality needed for the passivation provided by the GaP layer on the emitter.
Item ID: | 11718 |
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DC Identifier: | https://oa.upm.es/11718/ |
OAI Identifier: | oai:oa.upm.es:11718 |
Official URL: | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb... |
Deposited by: | Memoria Investigacion |
Deposited on: | 09 Oct 2012 09:27 |
Last Modified: | 20 Apr 2016 19:43 |