Citation
Gacevic, Zarko and Fernández-Garrido, Sergio and Rebled, J.M. and Estradé, S. and Peiró, F. and Calleja Pardo, Enrique
(2011).
High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy.
"Applied Physics Letters", v. 99
(n. 3);
pp..
ISSN 0003-6951.
https://doi.org/10.1063/1.3614434.
Abstract
We report on properties of high quality ~60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be +/- 1.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.