Full text
Preview |
PDF
- Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB) | Preview |
Fuentes Iriarte, Gonzalo ORCID: https://orcid.org/0000-0003-3803-6474, Rodriguez Madrid, Juan and Calle Gómez, Fernando
ORCID: https://orcid.org/0000-0001-7869-6704
(2012).
Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates.
"Journal of materials processing technology", v. 212
(n. 3);
pp. 707-712.
ISSN 0924-0136.
https://doi.org/10.1016/j.jmatprotec.2011.08.007.
Title: | Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates |
---|---|
Author/s: |
|
Item Type: | Article |
Título de Revista/Publicación: | Journal of materials processing technology |
Date: | March 2012 |
ISSN: | 0924-0136 |
Volume: | 212 |
Subjects: | |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Ingeniería Electrónica |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Preview |
PDF
- Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB) | Preview |
This work describes the electron-beam (e-beam) lithography process developed to manufacture nano interdigital transducers (IDTs) to be used in high frequency (GHz) surface acoustic wave (SAW) applications. The combination of electron-beam (e-beam) lithography and lift-off process is shown to be effective in fabricating well-defined IDT finger patterns with a line width below 100 nm with a good yield. Working with insulating piezoelectric substrates brings about e-beam deflection. It is also shown how a very thin organic anti-static layer works well in avoiding this charge accumulation during e-beam lithography on the resist layer. However, the use of this anti-static layer is not required with the insulating piezoelectric layer laying on a semiconducting substrate such as highly doped silicon. The effect of the e-beam dose on a number of different layers (of insulating, insulating on semiconducting, semiconducting, and conductive natures) is provided. Among other advantages, the use of reduced e-beam doses increases the manufacturing time.
The principal aim of this work is to explain the interrelation among e-beam dose, substrate nature and IDT structure. An extensive study of the e-beam lithography of long IDT-fingers is provided, in a wide variety of electrode widths, electrode numbers and electrode pitches. It is worthy to highlight that this work shows the influence of the e-beam dose on five substrates of different conductive nature
Item ID: | 11871 |
---|---|
DC Identifier: | https://oa.upm.es/11871/ |
OAI Identifier: | oai:oa.upm.es:11871 |
DOI: | 10.1016/j.jmatprotec.2011.08.007 |
Deposited by: | Memoria Investigacion |
Deposited on: | 27 Sep 2012 08:26 |
Last Modified: | 21 Apr 2016 11:03 |