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Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors
Citation
Tadjer, Marko Jak, Martin Horcajo, Sara, Calle Gómez, Fernando 
ORCID: https://orcid.org/0000-0001-7869-6704, Anderson, Travis J., Cuerdo Bragado, Roberto and Hobart, Karl D.
(2011).
Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors.
"Physica status solidi c"
;
pp. 1-3.
ISSN 1862-6351.
https://doi.org/10.1002/pssc.201001102.
Description
| Title: | Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Physica status solidi c |
| Date: | 2011 |
| ISSN: | 1862-6351 |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Relacionado con línea de investigación del GDS del ISOM ver http://www.isom.upm.es/dsemiconductores.php
More information
| Item ID: | 11895 |
|---|---|
| DC Identifier: | https://oa.upm.es/11895/ |
| OAI Identifier: | oai:oa.upm.es:11895 |
| DOI: | 10.1002/pssc.201001102 |
| Official URL: | http://onlinelibrary.wiley.com/doi/10.1002/pssc.20... |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 07 Mar 2013 08:07 |
| Last Modified: | 22 Sep 2014 10:52 |
