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Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents
Citation
Redondo-Cubero, Andrés, Hierro Cano, Adrián, Chauveau, J.-M., Lorenz, K., Tabares Jimenez, Gema, Franco, N., Alves, E. and Muñoz Merino, Elias (2011). Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents. "CrystEngComm", v. 1 (n. 2011); pp. 1-5. ISSN 1466-8033. https://doi.org/10.1039/C2CE06315H.
Description
| Title: | Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | CrystEngComm |
| Date: | 2011 |
| ISSN: | 1466-8033 |
| Volume: | 1 |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
High quality 1 μm thick a-plane MgxZn1−xO layers were produced by molecular beam epitaxy with Mg contents higher than 50%. Resonant Rutherford backscattering spectrometry combined with ion channeling revealed a uniform growth in both composition and atomic order. The lattice-site location of Mg, Zn and O elements was determined independently, proving the substitutional behaviour of Mg in Zn-sites of the wurtzite lattice. X-Ray diffraction pole figure analysis also confirms the absence of phase separation. Optical properties at such high Mg contents were studied in Schottky photodiodes.
More information
| Item ID: | 11939 |
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| DC Identifier: | https://oa.upm.es/11939/ |
| OAI Identifier: | oai:oa.upm.es:11939 |
| DOI: | 10.1039/C2CE06315H |
| Official URL: | http://pubs.rsc.org/en/Content/ArticleLanding/2012... |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 27 Sep 2012 11:13 |
| Last Modified: | 23 Feb 2015 15:45 |
