Si and SixGe1-x NWs studied by Raman spectroscopy

Anaya, J., Prieto Colorado, Ángel Carmelo, Martínez de Quel Pérez, Óscar, Torres, A., Martin Martin, A., Jiménez López, Juan Ignacio, Rodríguez Domínguez, Andrés, Sangrador García, Jesús and Rodríguez Rodríguez, Tomás (2011). Si and SixGe1-x NWs studied by Raman spectroscopy. "Physica Status Solidi c", v. 8 (n. 4); pp. 1307-1310. ISSN 1610-1642.


Title: Si and SixGe1-x NWs studied by Raman spectroscopy
  • Anaya, J.
  • Prieto Colorado, Ángel Carmelo
  • Martínez de Quel Pérez, Óscar
  • Torres, A.
  • Martin Martin, A.
  • Jiménez López, Juan Ignacio
  • Rodríguez Domínguez, Andrés
  • Sangrador García, Jesús
  • Rodríguez Rodríguez, Tomás
Item Type: Article
Título de Revista/Publicación: Physica Status Solidi c
Date: 2011
ISSN: 1610-1642
Volume: 8
Freetext Keywords: Si, nanowires, Raman spectroscopy, phonon confinement model, heat dissipation, finite element analysis
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Electrónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Group IV nanostructures have attracted a great deal of attention because of their potential applications in optoelectronics and nanodevices. Raman spectroscopy has been extensively used to characterize nanostructures since it provides non destructive information about their size, by the adequate modeling of the phonon confinement effect. The Raman spectrum is also sensitive to other factors, as stress and temperature, which can mix with the size effects borrowing the interpretation of the Raman spectrum. We present herein an analysis of the Raman spectra obtained for Si and SiGe nanowires; the influence of the excitation conditions and the heat dissipation media are discussed in order to optimize the experimental conditions for reliable spectra acquisition and interpretation.

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Item ID: 12293
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Deposited by: Memoria Investigacion
Deposited on: 29 Aug 2012 11:50
Last Modified: 21 Apr 2016 11:32
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