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Ion Beam irradiation of copper nitride: electronic vs elastic-collision mechanism
Citation
Gordillo Garcia, Nuria and Gonzalez Arrabal, Raquel and Rivera de Mena, Antonio and Munnik, F. and Agullo Lopez, Fernando (2011). Ion Beam irradiation of copper nitride: electronic vs elastic-collision mechanism. In: "20th International Conference on Ion Beam Analysis, IBA", 10/04/2011 - 15/04/2011, Itapema, Brasil.
Description
| Title: | Ion Beam irradiation of copper nitride: electronic vs elastic-collision mechanism |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Poster) |
| Event Title: | 20th International Conference on Ion Beam Analysis, IBA |
| Event Dates: | 10/04/2011 - 15/04/2011 |
| Event Location: | Itapema, Brasil |
| Title of Book: | Proceedings of 20th International Conference on Ion Beam Analysis, IBA |
| Date: | 2011 |
| Subjects: | |
| Faculty: | E.T.S.I. Industriales (UPM) |
| Department: | Ingeniería Nuclear [hasta 2014] |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Copper nitride is a metastable material which results very attractive because of their potential to be used in functional device. Cu3 N easily decomposes into Cu and N2 by annealing [1] or irradiation (electron, ions, laser) [2, 3]. Previous studies carried out in N-rich Cu3 N films irradiated with Cu at 42MeV evidence a very efficient sputtering of N whose yield (5×10 3 atom/ion), for a film with a thickness of just 100 nm, suggest that the origin of the sputtering has an electronic nature. This N depletion was observed to be responsible for new phase formation ( Cu2 O) and pure Cu [4]
More information
| Item ID: | 12501 |
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| DC Identifier: | https://oa.upm.es/12501/ |
| OAI Identifier: | oai:oa.upm.es:12501 |
| Official URL: | http://www.iba2011.org/site/tiki-index.php |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 08 Aug 2012 09:04 |
| Last Modified: | 21 Apr 2016 11:46 |
