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Bengoechea Encabo, Ana and Albert, Steven and Barbagini, Francesca and Lefebvre, P. and Sánchez García, Miguel Angel and Calleja Pardo, Enrique and Luna García de la Infanta, Esperanza and Trampert, Achim (2011). Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted. In: "9th International Conference on Nitride Semiconductors - ICNS9", 10/07/2011 - 15/07/2011, Glasgow, UK. pp..
Title: | Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted |
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Author/s: |
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Item Type: | Presentation at Congress or Conference (Other) |
Event Title: | 9th International Conference on Nitride Semiconductors - ICNS9 |
Event Dates: | 10/07/2011 - 15/07/2011 |
Event Location: | Glasgow, UK |
Title of Book: | Proceeings of 9th International Conference on Nitride Semiconductors - ICNS9 |
Date: | 2011 |
Subjects: | |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Ingeniería Electrónica |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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Selective area growth (SAG) of GaN nanocolumns (NCs), making use of patterned or masked (nanoholes) substrates, yields a periodic, homogeneous distribution of nanostructures, that makes their processing much easier compared with self-assembled ones. In addition, the control on the diameter and density of NCs avoids dispersion in the electrooptical characteristics of the heterostructures based on this type of material (embedded InGaN/GaN quantum disks for example). Selective area growth using a mask with nanohole arrays has been demonstrated by rf-plasma-assisted MBE [1, 2].
Item ID: | 12867 |
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DC Identifier: | https://oa.upm.es/12867/ |
OAI Identifier: | oai:oa.upm.es:12867 |
Official URL: | http://www.icns9.org/ |
Deposited by: | Memoria Investigacion |
Deposited on: | 26 Feb 2013 09:51 |
Last Modified: | 21 Apr 2016 12:11 |