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Rodriguez Madrid, Juan and Ro, R. and Lee, R. and Williams, Oliver A. and Araujo, Daniel and Calle Gómez, Fernando and Villar, María Del Pilar (2011). Fabrication of high frequency SAW resonators using AlN/Diamond/Si technology. In: "2011 IEEE International Ultrasonics Symposium (IUS)", 18/10/2011 - 21/10/2011, Orlando, Florida, EEUU. ISBN 978-1-4577-1253-1. pp..
Title: | Fabrication of high frequency SAW resonators using AlN/Diamond/Si technology |
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Author/s: |
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Item Type: | Presentation at Congress or Conference (Article) |
Event Title: | 2011 IEEE International Ultrasonics Symposium (IUS) |
Event Dates: | 18/10/2011 - 21/10/2011 |
Event Location: | Orlando, Florida, EEUU |
Title of Book: | Proceedings of 2011 IEEE International Ultrasonics Symposium (IUS) |
Date: | 2011 |
ISBN: | 978-1-4577-1253-1 |
Subjects: | |
Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
Department: | Ingeniería Electrónica |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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The synthesis of AlN on diamond is a great challenge, not only because of the between an AlN/diamond interface, but also because of the high surface roughness of the diamond layers [8, 9]. In the case of microcrystalline diamond, the last problem was solved by polishing. However, polishing nanocrystalline diamond is not straightforward. For the diamond synthesis by CVD, silicon was used as a substrate. The diamond/Si interface presents a smoother diamond than the diamond/air interface. This paper reports on the fabrication of high frequency SAW resonators using AlN/Diamond/Si technology.
Item ID: | 12898 |
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DC Identifier: | https://oa.upm.es/12898/ |
OAI Identifier: | oai:oa.upm.es:12898 |
Official URL: | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6293303 |
Deposited by: | Memoria Investigacion |
Deposited on: | 08 Nov 2012 12:01 |
Last Modified: | 21 Apr 2016 12:13 |