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Fabrication and characterization at high temperature of AlGaN/GaN enhancement HEMTs
Citation
Martin Horcajo, Sara, Tadjer, Marko Jak, Romero Rojo, Fátima 
ORCID: https://orcid.org/0000-0002-3940-8009, Cuerdo Bragado, Roberto and Calle Gómez, Fernando ORCID: https://orcid.org/0000-0001-7869-6704
(2011).
Fabrication and characterization at high temperature of AlGaN/GaN enhancement HEMTs.
In: "8th Spanish Conference on Electron Devices, CDE'2011", 08/02/2011 - 11/02/2011, Palma de Mallorca, España. ISBN 978-1-4244-7863-7. pp..
Description
| Title: | Fabrication and characterization at high temperature of AlGaN/GaN enhancement HEMTs |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Article) |
| Event Title: | 8th Spanish Conference on Electron Devices, CDE'2011 |
| Event Dates: | 08/02/2011 - 11/02/2011 |
| Event Location: | Palma de Mallorca, España |
| Title of Book: | Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 |
| Date: | 2011 |
| ISBN: | 978-1-4244-7863-7 |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Enhancement-mode (E-mode) high electron mobility transistors (HEMTs) based on a standard AlGaN/GaN heterostructure have been fabricated using two different methods: 19F implantation and fluorine-based plasma treatment. The need of a thermal annealing after both treatments has been proven in order to restore the ID and gm levels. DC characterization at high temperature has demonstrated that ID and gm decrease reversibly due to the reduction of the electron mobility and the drift velocity. Pulsed measurements (state period and variable pulse width) have been performed to study the self-heating effects.
More information
| Item ID: | 12913 |
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| DC Identifier: | https://oa.upm.es/12913/ |
| OAI Identifier: | oai:oa.upm.es:12913 |
| Official URL: | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb... |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 12 Dec 2012 18:11 |
| Last Modified: | 21 Apr 2016 12:14 |
