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Gas sensor based on room temperature optical properties of Surface QDs
Citation
Milla Rodrigo, M. J. and Ulloa Herrero, José María and Hierro Cano, Adrián and Fernández González, Alvaro de Guzmán (2011). Gas sensor based on room temperature optical properties of Surface QDs. In: "Proceedings European Workshop on Heterostructure Technology (HETECH)", 19/09/2011 - 23/09/2011, Lille (France) 2011. pp..
Description
| Title: | Gas sensor based on room temperature optical properties of Surface QDs |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Other) |
| Event Title: | Proceedings European Workshop on Heterostructure Technology (HETECH) |
| Event Dates: | 19/09/2011 - 23/09/2011 |
| Event Location: | Lille (France) 2011 |
| Title of Book: | European Workshop on Heterostructure Technology (HETECH), Lille, France, 2011. |
| Date: | 2011 |
| Subjects: | |
| Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Self-organized InGaAs QDs are intensively studied for optoelectronic applications. Several approaches are in study to reach the emission wavelengths needed for these applications. The use of antimony (Sb) in either the capping layer or into the dots is one example. However, these studies are normally focused on buried QD (BQD) where there are still different controversial theories concerning the role of Sb. Ones suggest that Sb incorporates into the dot [1], while others support the hypothesis that the Sb occupies positions surrounding the dot [2] thus helping to keep their shape during the capping growth.
More information
| Item ID: | 12915 |
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| DC Identifier: | https://oa.upm.es/12915/ |
| OAI Identifier: | oai:oa.upm.es:12915 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 29 Jan 2013 08:55 |
| Last Modified: | 21 Apr 2016 12:14 |
