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Raman spectrum of group IV nanowires: influence of temperature
Citation
Anaya, J. and Prieto, C. and Souto, J. and Jiménez, Juan and Rodríguez Domínguez, Andrés and Sangrador García, Jesús and Rodríguez Rodríguez, Tomás (2011). Raman spectrum of group IV nanowires: influence of temperature. In: "Materials Research Society Symposium 2011", 29/11/2010 - 02/12/2010, Boston, MA, EEUU. pp. 1-6. https://doi.org/10.1557/opl.2011.619.
Description
| Title: | Raman spectrum of group IV nanowires: influence of temperature |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Article) |
| Event Title: | Materials Research Society Symposium 2011 |
| Event Dates: | 29/11/2010 - 02/12/2010 |
| Event Location: | Boston, MA, EEUU |
| Title of Book: | Proceedings of Materials Research Society Symposium 2011 |
| Date: | 2011 |
| Volume: | 1305 |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Tecnología Electrónica [hasta 2014] |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Group IV semiconductor nanowires are characterized by Raman spectroscopy. The results are analyzed in terms of the heating induced by the laser beam on the nanowires. By solving the heat transport equation one can simulate the temperature reached by the NWs under the exposure to a laser beam. The results are illustrated with Si and Si1-xGex nanowires. Both bundles of nanowires and individual nanowires are studied. The main experimental conditions contributing to the nanowire heating are discussed
More information
| Item ID: | 13242 |
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| DC Identifier: | https://oa.upm.es/13242/ |
| OAI Identifier: | oai:oa.upm.es:13242 |
| DOI: | 10.1557/opl.2011.619 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 29 Nov 2012 08:37 |
| Last Modified: | 21 Apr 2016 12:32 |
