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Individualization and Electrical Characterization of SiGe Nanowires
Citation
Monasterio, Manuel and Rodríguez Domínguez, Andrés and Rodríguez Rodríguez, Tomás and Ballesteros Pérez, Carmen Inés (2011). Individualization and Electrical Characterization of SiGe Nanowires. In: "Materials Research Society Symposium 2011", 28/11/2011 - 02/12/2011, Boston, MA, EEUU. pp. 1-6. https://doi.org/10.1557/opl.2012.33.
Description
| Title: | Individualization and Electrical Characterization of SiGe Nanowires |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Article) |
| Event Title: | Materials Research Society Symposium 2011 |
| Event Dates: | 28/11/2011 - 02/12/2011 |
| Event Location: | Boston, MA, EEUU |
| Title of Book: | Proceedings of Materials Research Society Symposium 2011 |
| Date: | 2011 |
| Volume: | 1408 |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Tecnología Electrónica [hasta 2014] |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
SiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than three orders of magnitude upon doping, indicating that the doping procedure used has been effective
More information
| Item ID: | 13243 |
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| DC Identifier: | https://oa.upm.es/13243/ |
| OAI Identifier: | oai:oa.upm.es:13243 |
| DOI: | 10.1557/opl.2012.33 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 29 Nov 2012 08:31 |
| Last Modified: | 21 Apr 2016 12:33 |
