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SiGe nanowires grown by LPCVD using Ga-Au catalysts
Citation
Monasterio, Manuel and Rodríguez Domínguez, Andrés and Rodríguez Rodríguez, Tomás and Ballesteros Pérez, Carmen Inés (2011). SiGe nanowires grown by LPCVD using Ga-Au catalysts. In: "Materials Research Society Symposium 2011", 28/11/2011 - 02/12/2011, Boston, EEUU. pp. 1-6. https://doi.org/10.1557/opl.2012.34.
Description
| Title: | SiGe nanowires grown by LPCVD using Ga-Au catalysts |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Article) |
| Event Title: | Materials Research Society Symposium 2011 |
| Event Dates: | 28/11/2011 - 02/12/2011 |
| Event Location: | Boston, EEUU |
| Title of Book: | Proceedings of Materials Research Society Symposium 2011 |
| Date: | 2011 |
| Volume: | 1408 |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Tecnología Electrónica [hasta 2014] |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au
More information
| Item ID: | 13245 |
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| DC Identifier: | https://oa.upm.es/13245/ |
| OAI Identifier: | oai:oa.upm.es:13245 |
| DOI: | 10.1557/opl.2012.34 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 28 Nov 2012 12:51 |
| Last Modified: | 21 Apr 2016 12:33 |
