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Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy
Citation
Gacevic, Zarko 
ORCID: https://orcid.org/0000-0003-0552-2169, Fernández-Garrido, Sergio, Calleja Pardo, Enrique ORCID: https://orcid.org/0000-0002-3686-8982, Hosseini, D., Estradé, S. and Peiró, F.
(2011).
Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy.
In: "16th European Molecular Beam Epitaxy Workshop, Euro MEB 2011", 20/03/2011 - 23/03/2011, AlpesFranceses, Francia.
Description
| Title: | Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Poster) |
| Event Title: | 16th European Molecular Beam Epitaxy Workshop, Euro MEB 2011 |
| Event Dates: | 20/03/2011 - 23/03/2011 |
| Event Location: | AlpesFranceses, Francia |
| Title of Book: | Proceedings of 16th European Molecular Beam Epitaxy Workshop, Euro MEB 2011 |
| Date: | 2011 |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
The high lattice mismatch between III-nitride binaries (InN, GaN and AlN) remains a key problem to grow high quality III-nitride heterostructures. Recent interest has been focused on the growth of high-quality InAlN layers, with approximately 18% of indium incorporation, in-plane lattice-matched (LM) to GaN. While a lot of work has been done by metal-organic vapour phase epitaxy (MOVPE) by Carlin and co-workers, its growth by molecular beam epitaxy (MBE) is still in infancy
More information
| Item ID: | 13380 |
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| DC Identifier: | https://oa.upm.es/13380/ |
| OAI Identifier: | oai:oa.upm.es:13380 |
| Official URL: | http://embe2011.neel.cnrs.fr/spip.php?article39 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 24 Oct 2012 09:28 |
| Last Modified: | 21 Apr 2016 12:42 |
