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Understanding the Selective Area Nucleation and Growth of GaN nanocolumns by MBE using Ti nanomasks
Citation
Calleja Pardo, Enrique and Bengoechea Encabo, Ana and Albert, Steven and Sánchez García, Miguel Angel and Barbagini, Francesca and Luna, E. and Trampert, Achim and Jahn, U. and Lefebvre, F. (2011). Understanding the Selective Area Nucleation and Growth of GaN nanocolumns by MBE using Ti nanomasks. In: "2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices", 16/03/2011 - 18/03/2011, Granada, España.
Description
| Title: | Understanding the Selective Area Nucleation and Growth of GaN nanocolumns by MBE using Ti nanomasks |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Article) |
| Event Title: | 2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices |
| Event Dates: | 16/03/2011 - 18/03/2011 |
| Event Location: | Granada, España |
| Title of Book: | Proceedings of 2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices |
| Date: | 2011 |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
•Self- assembled Ga(In)N Nanorods and Nanostructures •Ordered growth of GaN Nanorods: masks issues •Ordered growth of GaN Nanorods: mechanisms •White NanoLEDs
More information
| Item ID: | 13538 |
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| DC Identifier: | https://oa.upm.es/13538/ |
| OAI Identifier: | oai:oa.upm.es:13538 |
| Official URL: | http://www.isom.upm.es/GeJpSp2011/index.html |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 22 Nov 2012 10:41 |
| Last Modified: | 21 Apr 2016 12:51 |
