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High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs
Citation
Martin Horcajo, Sara and Tadjer, Marko Jak and Di Forte Poisson, M-A. and Sarazin, N. and Morvan, E. and Dua, C. and Cuerdo Bragado, Roberto and Calle Gómez, Fernando (2011). High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs. In: "9th International Conference on Nitride Semiconductors", 10/07/2012 - 15/07/2012, Glasgow (UK),. pp..
Description
| Title: | High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Other) |
| Event Title: | 9th International Conference on Nitride Semiconductors |
| Event Dates: | 10/07/2012 - 15/07/2012 |
| Event Location: | Glasgow (UK), |
| Title of Book: | 9th International Conference on Nitride Semiconductors |
| Date: | 2011 |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
The AlGaN/GaN high-electron mobility transistors (HEMTs) have been considered as promising candidates for the next generation of high temperature, high frequency, high-power devices. The potential of GaN-based HEMTs may be improved using an AlInN barrier because of its better lattice match to GaN, resulting in higher sheet carrier densities without piezoelectric polarization [1]. This work has been focused on the study of AlInN HEMTs pulse and DC mode characterization at high temperature.
More information
| Item ID: | 13578 |
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| DC Identifier: | https://oa.upm.es/13578/ |
| OAI Identifier: | oai:oa.upm.es:13578 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 25 Feb 2013 10:59 |
| Last Modified: | 21 Apr 2016 12:54 |
